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AP0504GH-HF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP0504GH-HF-VB

VBsemi Elec · MOSFETs · TO-252

AP0504GH-HF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with absolute maximum gate-source voltage of ±25 V and threshold VGS(th) of 1.2 to 2.5 V.
2 D passive Drain of the 40 V N-channel MOSFET, rated for 85 A continuous at TC = 25 °C and 250 A pulsed (package limit 110 A).
3 S passive Source of the N-channel MOSFET, with continuous source-drain body diode current rated at 110 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TA = 25 °C 1
Gate-Source Voltage VGS -25 25 V TA = 25 °C 1
Continuous Drain Current ID 85 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 70 A TC = 70 °C, TJ = 175 °C 1
Continuous Drain Current ID 59 A TA = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 53 A TA = 70 °C, TJ = 175 °C 1
Pulsed Drain Current IDM 250 A 1
Avalanche Current IAS 80 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 320 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 110 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.6 A TA = 25 °C 1
Maximum Power Dissipation PD 312 W TC = 25 °C 1
Maximum Power Dissipation PD 200 W TC = 70 °C 1
Maximum Power Dissipation PD 3.13 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 32 40 °C/W Steady State 1
Junction-to-Case Thermal Resistance RthJC 0.33 0.4 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 0.0065 Ω VGS = 4.5 V, ID = 20 A 2
Total Gate Charge Qg 80 120 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate Resistance Rg 0.85 1.3 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 20 30 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 17 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 77 115 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 102 155 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 62 95 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 180 270 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 60 90 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 110 A TC = 25 °C 2
Pulse Diode Forward Current ISM 200 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 20 A 2
Body Diode Reverse Recovery Time trr 50 75 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Input Capacitance Ciss 2380 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 550 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 250 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Forward Transconductance gfs 180 S VDS = 15 V, ID = 30 A 2
Gate-Source Charge Qgs 20 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate-Drain Charge Qgd 12 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
VDS Temperature Coefficient ΔVDS/TJ 41 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -8 mV/°C ID = 250 µA 2

CAD (KiCad official)

  • Symbol: AP0504GH-HF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ap0504gh-hf-vb-etched.step / ap0504gh-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap0504gh-hf-vb.step / ap0504gh-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 b3f10f7a0866c710, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF