component
AOZ8S507BDS-07
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| aoz8s507bds-07-etched.glb | 6d ago |
| aoz8s507bds-07-etched.step | 6d ago |
| aoz8s507bds-07-hero.glb | 6d ago |
| aoz8s507bds-07-hero.overlay.json | 6d ago |
| aoz8s507bds-07.glb | 6d ago |
| aoz8s507bds-07.kicad_mod | 6d ago |
| aoz8s507bds-07.kicad_sym | 6d ago |
| aoz8s507bds-07.lbr | 6d ago |
| aoz8s507bds-07.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
AOZ8S507BDS-07
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
AOZ8S507BDS-07 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bidirectional ESD protection diode for the single protected signal line, with a reverse working voltage VRWM of 7.0 V and a typical junction capacitance of 18.0 pF at 0 V, 1 MHz; the datasheet does not state which terminal is the signal line. |
| 2 | 2 | passive | The other terminal of the bidirectional ESD protection diode for the single protected signal line, with a 7.0 V reverse working voltage and 13 V clamping voltage at 8 A (8/20 µs); the datasheet does not state which terminal is the signal line. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Operating Temperature Range | TOP | -40 | 125 | °C | 2 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 2 | ||
| Peak Pulse Power | PPPM | 104 | W | tp = 8/20μs | 2 | ||
| Maximum junction temperature | Tj | 150 | °C | 2 | |||
| ESD voltage (air discharge) | VESD | 20 | kV | IEC 61000-4-2 (air discharge) | 2 | ||
| ESD voltage (contact discharge) | VESD | 15 | kV | IEC 61000-4-2 (contact discharge) | 2 | ||
| Reverse Working Voltage | VRWM | 7 | V | 2 | |||
| Breakdown Voltage | VBR | 7.6 | 8.2 | 9 | V | IT=1mA | 2 |
| Leakage Current | ILeak | 0.1 | nA | VRWM=7.0V | 2 | ||
| Clamping Voltage | VC | 10 | 12 | V | IPP=5A, Tp=8/20μs | 2 | |
| Clamping Voltage | VC | 11.5 | 13 | V | IPP=8A, Tp=8/20μs | 2 | |
| Junction Capacitance | CJ | 18 | pF | VR=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
AOZ8S507BDS-07 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
aoz8s507bds-07-etched.step/aoz8s507bds-07-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aoz8s507bds-07.step/aoz8s507bds-07.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
650a16ad0d1c9a37, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).