component
AOTF7S65
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOTF7S65
Alpha & Omega Semicon · MOSFETs · TO-220F
AOTF7S65 from Alpha & Omega Semicon, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30V and the gate threshold is 2.6V min, 3.3V typ, 4V max at VDS=5V, ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage is rated at 650V with pulsed drain current of 30A and continuous drain current of 7A at TC=25°C (current limited by junction temperature). |
| 3 | S | passive | Source; body-diode continuous current is 7A max and pulsed body-diode current is 30A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 7 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Avalanche Current | IAR | 1.7 | A | 1 | |||
| Repetitive avalanche energy | EAR | 43 | mJ | 1 | |||
| Single pulsed avalanche energy | EAS | 86 | mJ | L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C | 1 | ||
| MOSFET dv/dt ruggedness | dv/dt | 100 | V/ns | 1 | |||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 35 | W | TC=25°C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Case thermal resistance | RθJC | 3.6 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 700 | 750 | V | ID=250µA, VGS=0V, TJ=150°C | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=650V, VGS=0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.6 | 3.3 | 4 | V | VDS=5V, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.54 | 0.65 | Ω | VGS=10V, ID=3.5A, TJ=25°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.48 | 1.64 | Ω | VGS=10V, ID=3.5A, TJ=150°C | 2 | |
| Maximum Body-Diode Continuous Current | IS | 7 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 30 | A | 2 | |||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS=520V, TJ=150°C | 2 | ||
| Diode Forward Voltage | VSD | 0.82 | V | IS=3.5A, VGS=0V, TJ=25°C | 2 | ||
| Input Capacitance | Ciss | 434 | pF | VGS=0V, VDS=100V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 30 | pF | VGS=0V, VDS=100V, f=1MHz | 2 | ||
| Effective output capacitance, energy related | Co(er) | 23 | pF | VGS=0V, VDS=0 to 480V, f=1MHz | 2 | ||
| Effective output capacitance, time related | Co(tr) | 80 | pF | VGS=0V, VDS=0 to 480V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 1 | pF | VGS=0V, VDS=100V, f=1MHz | 2 | ||
| Gate resistance | Rg | 17.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 9.2 | nC | VGS=10V, VDS=480V, ID=3.5A | 2 | ||
| Gate Source Charge | Qgs | 2.5 | nC | VGS=10V, VDS=480V, ID=3.5A | 2 | ||
| Gate Drain Charge | Qgd | 2.7 | nC | VGS=10V, VDS=480V, ID=3.5A | 2 | ||
| Turn-On DelayTime | tD(on) | 21 | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 | ||
| Turn-On Rise Time | tr | 14 | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 55 | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 | ||
| Turn-Off Fall Time | tf | 15 | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 224 | ns | IF=3.5A, dI/dt=100A/µs, VDS=400V | 2 | ||
| Peak Reverse Recovery Current | Irm | 19 | A | IF=3.5A, dI/dt=100A/µs, VDS=400V | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.8 | µC | IF=3.5A, dI/dt=100A/µs, VDS=400V | 2 | ||
| Derate above 25°C | 0.3 | W/°C | Derate above 25°C | 1 |
CAD (KiCad official)
- Symbol:
AOTF7S65 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (7 pp, sha256
401cae2b5df563b4, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOTF7S65
**Alpha & Omega Semicon** · MOSFETs · TO-220F
AOTF7S65 from Alpha & Omega Semicon, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30V and the gate threshold is 2.6V min, 3.3V typ, 4V max at VDS=5V, ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage is rated at 650V with pulsed drain current of 30A and continuous drain current of 7A at TC=25°C (current limited by junction temperature). |
| 3 | S | passive | Source; body-diode continuous current is 7A max and pulsed body-diode current is 30A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 650 | V | | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 7 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDM | | | 30 | A | | 1 |
| Avalanche Current | IAR | | | 1.7 | A | | 1 |
| Repetitive avalanche energy | EAR | | | 43 | mJ | | 1 |
| Single pulsed avalanche energy | EAS | | | 86 | mJ | L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C | 1 |
| MOSFET dv/dt ruggedness | dv/dt | | | 100 | V/ns | | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | | 1 |
| Power Dissipation | PD | | | 35 | W | TC=25°C | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Case thermal resistance | RθJC | | | 3.6 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | ID=250µA, VGS=0V, TJ=25°C | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 700 | 750 | | V | ID=250µA, VGS=0V, TJ=150°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=650V, VGS=0V | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±30V | 2 |
| Gate Threshold Voltage | VGS(th) | 2.6 | 3.3 | 4 | V | VDS=5V, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.54 | 0.65 | Ω | VGS=10V, ID=3.5A, TJ=25°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 1.48 | 1.64 | Ω | VGS=10V, ID=3.5A, TJ=150°C | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 7 | A | | 2 |
| Maximum Body-Diode Pulsed Current | ISM | | | 30 | A | | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 10 | | µA | VDS=520V, TJ=150°C | 2 |
| Diode Forward Voltage | VSD | | 0.82 | | V | IS=3.5A, VGS=0V, TJ=25°C | 2 |
| Input Capacitance | Ciss | | 434 | | pF | VGS=0V, VDS=100V, f=1MHz | 2 |
| Output Capacitance | Coss | | 30 | | pF | VGS=0V, VDS=100V, f=1MHz | 2 |
| Effective output capacitance, energy related | Co(er) | | 23 | | pF | VGS=0V, VDS=0 to 480V, f=1MHz | 2 |
| Effective output capacitance, time related | Co(tr) | | 80 | | pF | VGS=0V, VDS=0 to 480V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 1 | | pF | VGS=0V, VDS=100V, f=1MHz | 2 |
| Gate resistance | Rg | | 17.5 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 9.2 | | nC | VGS=10V, VDS=480V, ID=3.5A | 2 |
| Gate Source Charge | Qgs | | 2.5 | | nC | VGS=10V, VDS=480V, ID=3.5A | 2 |
| Gate Drain Charge | Qgd | | 2.7 | | nC | VGS=10V, VDS=480V, ID=3.5A | 2 |
| Turn-On DelayTime | tD(on) | | 21 | | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 |
| Turn-On Rise Time | tr | | 14 | | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 |
| Turn-Off DelayTime | tD(off) | | 55 | | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 |
| Turn-Off Fall Time | tf | | 15 | | ns | VGS=10V, VDS=400V, ID=3.5A, RG=25Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 224 | | ns | IF=3.5A, dI/dt=100A/µs, VDS=400V | 2 |
| Peak Reverse Recovery Current | Irm | | 19 | | A | IF=3.5A, dI/dt=100A/µs, VDS=400V | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 2.8 | | µC | IF=3.5A, dI/dt=100A/µs, VDS=400V | 2 |
| Derate above 25°C | | | 0.3 | | W/°C | Derate above 25°C | 1 |
## CAD (KiCad official)
- Symbol: `AOTF7S65`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aotf7s65-datasheet.pdf) (7 pp, sha256 `401cae2b5df563b4`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aotf7s65-datasheet.pdf)