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AOTF409-VB

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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOTF409-VB

VBsemi Elec · MOSFETs · TO-220F

AOTF409-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits gate-source voltage to ±20 V (VGS).
2 D passive Drain terminal; the datasheet rates drain-source voltage at -60 V and continuous drain current at -30 A at TC = 25 °C.
3 S passive Source terminal; the datasheet gives source-side ratings only through the body diode, with continuous current IS of -36 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -30 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -29 A TC = 70 °C 1
Pulsed Drain Current IDM -100 A t = 300 µs 1
Avalanche Current IAS -32 A 1
Single Avalanche Energy EAS 51 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 41.7 W TC = 25 °C 1
Maximum Power Dissipation PD 2.1 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 60 °C/W PCB mount 1
Junction-to-Case (Drain) RthJC 3 °C/W 1
Drain-Source Breakdown Voltage VDS -60 V VDS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = -60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -30 A VDS = -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.05 Ω VGS = -10 V, ID = -14 A 2
Drain-Source On-State Resistance RDS(on) 0.06 Ω VGS = -4.5 V, ID = -12 A 2
Gate Resistance Rg 0.5 2.5 5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 10 20 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Rise Time tr 11 20 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Turn-Off Delay Time td(off) 42 63 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Fall Time tf 12 20 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1 2
Continuous Current IS -36 A TC = 25 °C 2
Pulsed Current ISM -100 A 2
Forward Voltage VSD -0.8 -1.5 V IF = -10 A, VGS = 0 V 2
Reverse Recovery Time trr 38 57 ns IF = -10 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.3 3.5 A IF = -10 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 40 60 nC IF = -10 A, dI/dt = 100 A/µs 2
Total Gate Charge Qg 67 nC VDS = -20 V, VGS = -10 V, ID = -14 A 2
Input Capacitance Ciss 1765 pF VGS = 0 V, VDS = -20 V, f = 1 MHz 2
Output Capacitance Coss 230 pF VGS = 0 V, VDS = -20 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 180 pF VGS = 0 V, VDS = -20 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: AOTF409-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 2bbac1d2e33ec259, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF