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AOTF190A60L
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Alpha Omega Semicon MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOTF190A60L
Alpha Omega Semicon · MOSFETs · TO-220F-3
AOTF190A60L from Alpha Omega Semicon, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V DC (±30V dynamic AC, f>1Hz), threshold 3.2V min to 4.6V max at VDS=5V, ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage rated 600V, continuous current 20A at TC=25°C (12A at 100°C), pulsed 80A. |
| 3 | S | passive | Source; body-diode continuous current up to 20A and pulsed 80A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | ID=250μA, VGS=0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | mA | VDS=600V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | mA | VDS=480V, TJ=125°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3.2 | 4 | 4.6 | V | VDS=5V, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.17 | 0.19 | Ω | VGS=10V, ID=7.6A | 2 | |
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | IS=10A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 20 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 80 | A | 2 | |||
| Drain-Source Voltage | VDS | 600 | V | 1 | |||
| Gate-Source Voltage (continuous) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (dynamic) AC (f>1Hz) | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 12 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Avalanche Current | IAR | 5 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 12.5 | mJ | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 410 | mJ | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 20 | V/ns | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 100 | V/ns | 1 | |||
| Power Dissipation | PD | 32 | W | TC=25°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 65 | °C/W | still air environment, TA=25°C (note A) | 1 | ||
| Maximum Junction-to-Case | RθJC | 3.9 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
AOTF190A60L - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
f0553d836c769ba7, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOTF190A60L
**Alpha Omega Semicon** · MOSFETs · TO-220F-3
AOTF190A60L from Alpha Omega Semicon, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V DC (±30V dynamic AC, f>1Hz), threshold 3.2V min to 4.6V max at VDS=5V, ID=250µA. |
| 2 | D | passive | Drain; drain-source voltage rated 600V, continuous current 20A at TC=25°C (12A at 100°C), pulsed 80A. |
| 3 | S | passive | Source; body-diode continuous current up to 20A and pulsed 80A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | | | V | ID=250μA, VGS=0V, TJ=25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | mA | VDS=600V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | mA | VDS=480V, TJ=125°C | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 3.2 | 4 | 4.6 | V | VDS=5V, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.17 | 0.19 | Ω | VGS=10V, ID=7.6A | 2 |
| Diode Forward Voltage | VSD | | 0.85 | 1.2 | V | IS=10A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 20 | A | | 2 |
| Maximum Body-Diode Pulsed Current | ISM | | | 80 | A | | 2 |
| Drain-Source Voltage | VDS | | | 600 | V | | 1 |
| Gate-Source Voltage (continuous) | VGS | -20 | | 20 | V | | 1 |
| Gate-Source Voltage (dynamic) AC (f>1Hz) | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 20 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | 12 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 80 | A | | 1 |
| Avalanche Current | IAR | | | 5 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 12.5 | mJ | | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 410 | mJ | | 1 |
| MOSFET dv/dt ruggedness | dv/dt | | | 20 | V/ns | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 100 | V/ns | | 1 |
| Power Dissipation | PD | | | 32 | W | TC=25°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Lead Temperature for Soldering | TL | | | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Maximum Junction-to-Ambient | RθJA | | | 65 | °C/W | still air environment, TA=25°C (note A) | 1 |
| Maximum Junction-to-Case | RθJC | | | 3.9 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `AOTF190A60L`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588888211724636160) (6 pp, sha256 `f0553d836c769ba7`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aotf190a60l-datasheet.pdf)