component

AOT470

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaot470factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers aot470: viewers · Ray 17d ago
aot470-etched.glb Publish 0.1.0 · Ray 17d ago
aot470-etched.step aot470: factory component page (tier=lcsc) · Ray 17d ago
aot470-hero.glb aot470: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
aot470-hero.overlay.json Publish 0.1.0 · Ray 17d ago
aot470.glb Publish 0.1.0 · Ray 17d ago
aot470.kicad_mod Publish 0.1.0 · Ray 17d ago
aot470.kicad_sym Publish 0.1.0 · Ray 17d ago
aot470.lbr Publish 0.1.0 · Ray 17d ago
aot470.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

AOT470

Alpha Omega Semicon · MOSFETs · TO-220

AOT470 from Alpha Omega Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±25 V maximum, with a gate threshold of 2 V min, 2.7 V typ and 4 V max.
2 D passive Drain, connected to the tab; drain-source voltage is rated at 75 V, with continuous drain current of 100 A at TC=25°C.
3 S passive Source; the body diode continuous current is rated at 100 A.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 75 V ID=250µA, VGS=0V 2
Gate Threshold Voltage VGS(th) 2 2.7 4 V VDS=VGS, ID=250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=75V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS 5 µA TJ=55°C, VDS=75V, VGS=0V 2
Gate-Body leakage current IGSS 1 µA VDS=0V, VGS=±25V 2
On state drain current ID(ON) 200 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance (TO220) RDS(ON) 8.3 10.5 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance (TJ=125°C, TO220) RDS(ON) 13.7 17 mΩ TJ=125°C, VGS=10V, ID=30A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 100 A 2
Input Capacitance Ciss 3760 4700 5640 pF VGS=0V, VDS=30V, f=1MHz 2
Output Capacitance Coss 280 400 520 pF VGS=0V, VDS=30V, f=1MHz 2
Reverse Transfer Capacitance Crss 110 180 250 pF VGS=0V, VDS=30V, f=1MHz 2
Gate resistance Rg 1.5 3 4.5 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 114 136 nC VGS=10V, VDS=30V, ID=30A 2
Gate Source Charge Qgs 33 40 nC VGS=10V, VDS=30V, ID=30A 2
Gate Drain Charge Qgd 18 25 nC VGS=10V, VDS=30V, ID=30A 2
Body Diode Reverse Recovery Time trr 37 53 70 ns IF=30A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 100 143 185 nC IF=30A, dI/dt=100A/µs 2
Forward Transconductance gFS 90 S VDS=5V, ID=30A 2
Turn-On DelayTime tD(on) 21 ns VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω 2
Turn-On Rise Time tr 39 ns VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 70 ns VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 24 ns VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω 2
Drain-Source Voltage VDS 75 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID 100 A TC=25°C 1
Continuous Drain Current ID 78 A TC=100°C 1
Pulsed Drain Current IDM 300 A 1
Power Dissipation PD 268 W TC=25°C 1
Power Dissipation PD 134 W TC=100°C 1
Power Dissipation PDSM 2.1 W TA=25°C 1
Power Dissipation PDSM 1.3 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Maximum Junction-to-Ambient (t≤10s) RθJA 10 12 °C/W t≤10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 45 60 °C/W Steady-State 1
Maximum Junction-to-Case (Steady-State) RθJC 0.45 0.56 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AOT470
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: aot470-etched.step / aot470-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aot470.step / aot470.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 8ba16ccb28da5f70, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF