component

AOT296L-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoraot296l-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 6d ago
viewers aot296l-vb: viewers · Ray 6d ago
aot296l-vb-etched.glb Publish 0.1.0 · Ray 6d ago
aot296l-vb-etched.step aot296l-vb: factory component page (tier=lcsc) · Ray 6d ago
aot296l-vb-hero.glb aot296l-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 6d ago
aot296l-vb-hero.overlay.json Publish 0.1.0 · Ray 6d ago
aot296l-vb.glb Publish 0.1.0 · Ray 6d ago
aot296l-vb.kicad_mod Publish 0.1.0 · Ray 6d ago
aot296l-vb.kicad_sym Publish 0.1.0 · Ray 6d ago
aot296l-vb.lbr Publish 0.1.0 · Ray 6d ago
aot296l-vb.step Publish 0.1.0 · Ray 6d ago
package.json Publish 0.1.0 · Ray 6d ago
page.json Set visibility: public · Ray 6d ago
README.md Publish 0.1.0 · Ray 6d ago

AOT296L-VB

VBsemi Elec · MOSFETs · TO-220AB

AOT296L-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V.
2 D passive Drain of the N-channel MOSFET; the datasheet rates drain-source voltage at 100 V and continuous drain current at 100 A (TC = 25 °C).
3 S passive Source of the N-channel MOSFET; the datasheet rates continuous source (diode) current at 85 A and pulsed current at 240 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 100 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID 75 A TJ = 150 °C; TC = 125 °C 1
Pulsed Drain Current IDM 300 A 1
Avalanche Current IAS 75 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 280 mJ 1
Maximum Power Dissipation PD 250 W TC = 25 °C (TO-220AB and TO-263) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient, Free Air (TO-220AB) RthJA 62.5 °C/W Free air (TO-220AB) 1
Junction-to-Case RthJC 0.6 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.009 Ω VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = 4.5 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.023 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Total Gate Charge Qg 105 160 nC VDS = 50 V, VGS = 10 V, ID = 85 A 2
Turn-On Delay Time td(on) 12 25 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 90 135 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 55 85 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 130 195 ns VDD = 50 V, RL = 0.6 Ω, ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 2
Reverse Recovery Time trr 85 140 ns IF = 50 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 4.5 7 A 2
Reverse Recovery Charge Qrr 0.17 0.35 µC 2
Forward Voltage VSD 1 1.5 V IF = 85 A, VGS = 0 V 2
Continuous Current (source-drain diode) IS 85 A TC = 25 °C 2
Pulsed Current (source-drain diode) ISM 240 A TC = 25 °C 2

CAD (KiCad official)

  • Symbol: AOT296L-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: aot296l-vb-etched.step / aot296l-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aot296l-vb.step / aot296l-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 9bc41a1e2e3a2f1d, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF