component
AOT266L
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOT266L
Alpha & Omega Semicon · MOSFETs · TO-220
AOT266L from Alpha & Omega Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V maximum. |
| 2 | D | passive | Drain (also connected to the tab); drain-source voltage rated 60 V maximum. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=60V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.2 | 2.7 | 3.2 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.6 | 3.2 | mΩ | VGS=10V, ID=20A, TO220/TO220F | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.9 | 5.9 | mΩ | VGS=10V, ID=20A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.9 | 3.5 | mΩ | VGS=6V, ID=20A, TO220/TO220F | 2 | |
| Diode Forward Voltage | VSD | 0.65 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 140 | A | 2 | |||
| Gate resistance | Rg | 0.4 | 0.9 | 1.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 65 | 90 | nC | VGS=10V, VDS=30V, ID=20A | 2 | |
| Forward Transconductance | gFS | 80 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 5650 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 720 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 20 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Case | RθJC | 0.56 | °C/W | Steady-State, AOT266L/AOB266L | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 15 | °C/W | t ≤ 10s | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 60 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AOT266L - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
aot266l-etched.step/aot266l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aot266l.step/aot266l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (7 pp, sha256
0402abebcc3490e8, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).