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AOSS62934-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOSS62934-HXY

HXY MOSFET · MOSFETs · SOT-23

AOSS62934-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V, with VGS(th) 1.2 V min to 2.5 V max at ID=250uA and operation with gate drive as low as 4.5 V.
2 D passive Drain; drain-source voltage rated 100 V with continuous drain current of 5 A at TA=25℃ and pulsed drain current of 16 A.
3 S passive Source; continuous source current (body diode) is 2 A max, with diode forward voltage of 1.2 V max at IS=1A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 108 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 110 125 mΩ VGS=10V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 120 145 mΩ VGS=4.5V , ID=2A 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 50 uA VDS=80V , VGS=0V , TJ=85℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Resistance Rg 2.3 4.6 Ω VDS=0V , VGS=0V , f=1MHz 2
Continuous Source Current IS 2 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TA=25℃ 5 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 3.2 A VGS @ 10V 1
Pulsed Drain Current IDM 16 A 1
Total Power Dissipation PD@TA=25℃ 3.1 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient (steady state) RθJA 100 ℃/W steady state 1
Thermal Resistance Junction-ambient (t<10s) RθJA 40 ℃/W t<10s 1
Total Gate Charge (10V) Qg 3.57 nC VDS=30V , VGS=10V , ID=4A 2
Gate-Source Charge Qgs 0.76 nC VDS=30V , VGS=10V , ID=4A 2
Gate-Drain Charge Qgd 0.71 nC VDS=30V , VGS=10V , ID=4A 2
Turn-On Delay Time Td(on) 11 ns VDD=30V , VGS=10V , RG=3.3 ID=1A 2
Rise Time Tr 6 ns VDD=30V , VGS=10V , RG=3.3 ID=1A 2
Turn-Off Delay Time Td(off) 30 ns VDD=30V , VGS=10V , RG=3.3 ID=1A 2
Fall Time Tf 4 ns VDD=30V , VGS=10V , RG=3.3 ID=1A 2
Input Capacitance Ciss 182 pF VDS=50V , VGS=0V , f=1MHz 2
Output Capacitance Coss 30 pF VDS=50V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 3.6 pF VDS=50V , VGS=0V , f=1MHz 2

CAD (KiCad official)

  • Symbol: AOSS62934-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: aoss62934-hxy-etched.step / aoss62934-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aoss62934-hxy.step / aoss62934-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 2892fb8ade1887cb, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF