component
AOSS32136C
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOSS32136C
Alpha & Omega Semicon · MOSFETs · SOT-23-3
AOSS32136C from Alpha & Omega Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, with built-in ESD protection diodes to source; gate-source voltage is limited to ±12V and threshold is 0.45V to 1.25V. |
| 2 | S | passive | Source of the N-channel MOSFET; the body diode runs from source to drain and carries up to 2A continuous. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for 20V drain-source voltage and 6.5A continuous drain current at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOT-23-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID=250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=20V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.85 | 1.25 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 15 | 20 | mΩ | VGS=4.5V, ID=6.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 28 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 26 | mΩ | VGS=2.5V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 45 | mΩ | VGS=1.8V, ID=4.5A | 2 | |
| Diode Forward Voltage | VSD | 0.6 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 | |||
| Gate Resistance | Rg | 2 | 4 | 6 | Ω | f=1MHz | 2 |
| Total Gate Charge | Qg | 7 | 14 | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 | |
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 6.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 38 | A | 1 | |||
| Power Dissipation | PD | 1.3 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (steady-state) | RθJA | 125 | °C/W | Steady-state, 1in2 FR-4 board, 2oz copper, TA=25°C | 1 |
CAD (KiCad official)
- Symbol:
AOSS32136C - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
aoss32136c-etched.step/aoss32136c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aoss32136c.step/aoss32136c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (5 pp, sha256
5b27eb0fbd2d5875, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOSS32136C
**Alpha & Omega Semicon** · MOSFETs · SOT-23-3
AOSS32136C from Alpha & Omega Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, with built-in ESD protection diodes to source; gate-source voltage is limited to ±12V and threshold is 0.45V to 1.25V. |
| 2 | S | passive | Source of the N-channel MOSFET; the body diode runs from source to drain and carries up to 2A continuous. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for 20V drain-source voltage and 6.5A continuous drain current at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOT-23-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | VDS=20V, VGS=0V, TJ=55°C | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.85 | 1.25 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 15 | 20 | mΩ | VGS=4.5V, ID=6.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 21 | 28 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 18 | 26 | mΩ | VGS=2.5V, ID=6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 30 | 45 | mΩ | VGS=1.8V, ID=4.5A | 2 |
| Diode Forward Voltage | VSD | | 0.6 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 2 | A | | 2 |
| Gate Resistance | Rg | 2 | 4 | 6 | Ω | f=1MHz | 2 |
| Total Gate Charge | Qg | | 7 | 14 | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 6.5 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 5 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 38 | A | | 1 |
| Power Dissipation | PD | | | 1.3 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 0.8 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (steady-state) | RθJA | | | 125 | °C/W | Steady-state, 1in2 FR-4 board, 2oz copper, TA=25°C | 1 |
## CAD (KiCad official)
- Symbol: `AOSS32136C`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `aoss32136c-etched.step` / `aoss32136c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aoss32136c.step` / `aoss32136c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aoss32136c-datasheet.pdf) (5 pp, sha256 `5b27eb0fbd2d5875`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aoss32136c-datasheet.pdf)