# AOSP36326C

**Alpha & Omega Semicon** · MOSFETs · SOIC-8

AOSP36326C from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, on the pin-1 end of the package. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET, with a VGS rating of ±20V and a threshold of 1.3V min, 1.8V typ and 2.3V max. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 30V VDS and 12A continuous at TA=25°C. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to the same drain as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to the same drain as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to the same drain as pins 5, 6 and 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250μA, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 9 | 11 | mΩ | VGS=10V, ID=12A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) |  | 12.5 | 15 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 13.5 | 17 | mΩ | VGS=4.5V, ID=10A | 2 |
| Gate Resistance | Rg | 1 | 2 | 3 | Ω | f=1MHz | 2 |
| Diode Forward Voltage | VSD |  | 0.72 | 1 | V | IS=1A, VGS=0V | 2 |
| Total Gate Charge (10V) | Qg (10V) |  | 9 | 15 | nC | VGS=10V, VDS=15V, ID=12A | 2 |
| Total Gate Charge (4.5V) | Qg (4.5V) |  | 4.3 | 7 | nC |  | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Pulsed Drain Current | IDM |  |  | 48 | A | Repetitive rating, pulse width limited by TJ(MAX)=150°C | 1 |
| Avalanche Current | IAS |  |  | 12 | A |  | 1 |
| Avalanche Energy | EAS |  |  | 11 | mJ | L=0.1mH | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `AOSP36326C`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `aosp36326c-etched.step` / `aosp36326c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aosp36326c.step` / `aosp36326c.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600368734876024832) (5 pp, sha256 `c851ff024f83a94e`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aosp36326c-datasheet.pdf)