# AOSP21357

**Alpha Omega Semicon** · MOSFETs · SO-8

AOSP21357 from Alpha Omega Semicon, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the -30 V P-channel MOSFET, carrying the drain-source current with a rated drain-source voltage of -30 V. |
| 2 | S | passive | Source terminal of the -30 V P-channel MOSFET, carrying the drain-source current with a rated drain-source voltage of -30 V. |
| 3 | S | passive | Source terminal of the -30 V P-channel MOSFET, carrying the drain-source current with a rated drain-source voltage of -30 V. |
| 4 | G | input | Gate terminal that controls the MOSFET, with a gate-source voltage rating of ±25 V. |
| 5 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the -30 V P-channel MOSFET, rated for continuous drain current of -16 A at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID=-250mA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | TJ=55°C, VDS=-30V, VGS=0V | 2 |
| Gate-Body leakage current |  | -100 |  | 100 | nA | VDS=0V, VGS=±25V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.75 | -2.3 | V | VDS=VGS, ID=-250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 7 | 8.5 | mΩ | VGS=-10V, ID=-16A, TJ=25°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 9.6 | 11.6 | mΩ | TJ=125°C, VGS=-10V, ID=-16A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 10.5 | 13 | mΩ | VGS=-4.5V, ID=-12A | 2 |
| Forward Transconductance | gFS |  | 50 |  | S | VDS=-5V, ID=-16A | 2 |
| Diode Forward Voltage | VSD |  | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -4 | A |  | 2 |
| Gate resistance | Rg |  | 14 | 28 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) |  | 50 | 70 | nC | VGS=-10V, VDS=-15V, ID=-16A | 2 |
| Total Gate Charge (4.5V) | Qg (4.5V) |  | 25 | 35 | nC |  | 2 |
| Gate Source Charge | Qgs |  | 9 |  | nC |  | 2 |
| Gate Drain Charge | Qgd |  | 12 |  | nC |  | 2 |
| Input Capacitance | Ciss |  | 2830 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 430 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 365 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Turn-On Delay Time | tD(on) |  | 12 |  | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 12.5 |  | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 135 |  | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 63 |  | ns | VGS=-10V, VDS=-15V, RL=0.95Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 32 |  | ns | IF=-16A, di/dt=500A/ms | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 62 |  | nC | IF=-16A, di/dt=500A/ms | 2 |
| Drain-Source Voltage | VDS |  |  | -30 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -25 |  | 25 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -16 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -12.5 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | -64 | A |  | 1 |
| Avalanche Current | IAS |  |  | 39 | A |  | 1 |
| Avalanche energy | EAS |  |  | 76 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 3.1 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (t≤10s) | RθJA |  | 31 | 40 | °C/W | t≤10s | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA |  | 59 | 75 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead (Steady-State) | RθJL |  | 16 | 24 | °C/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `AOSP21357`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `aosp21357-etched.step` / `aosp21357-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aosp21357.step` / `aosp21357.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588919925326536704) (5 pp, sha256 `afeb9b7028b19ce3`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aosp21357-datasheet.pdf)