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AOSP21321

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Alpha & Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOSP21321

Alpha & Omega Semicon · MOSFETs · SOIC-8

AOSP21321 from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 30V P-channel MOSFET, rated for a drain-source voltage of -30V maximum.
2 S passive Source terminal of the 30V P-channel MOSFET, rated for a drain-source voltage of -30V maximum.
3 S passive Source terminal of the 30V P-channel MOSFET, rated for a drain-source voltage of -30V maximum.
4 G input Gate terminal, with gate-source voltage rated at ±25V maximum; RDS(ON) is specified at VGS = -4.5V and -10V.
5 D passive Drain terminal of the 30V P-channel MOSFET, rated for a drain-source voltage of -30V maximum.
6 D passive Drain terminal of the 30V P-channel MOSFET, rated for a drain-source voltage of -30V maximum.
7 D passive Drain terminal of the 30V P-channel MOSFET, rated for a drain-source voltage of -30V maximum.
8 D passive Drain terminal of the 30V P-channel MOSFET, rated for a drain-source voltage of -30V maximum.

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package SOIC-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V printed as ±25 1
Continuous Drain Current ID -11 A TA=25°C 1
Continuous Drain Current ID -8.5 A TA=70°C 1
Pulsed Drain Current IDM -44 A 1
Avalanche Current IAS 25 A 1
Avalanche energy EAS 31 mJ L=0.1mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambian RθJA 31 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 59 75 °C/W Steady-State 1
Maximum Junction-to-Lead RθJL 16 24 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -5 µA TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±25V 2
Gate Threshold Voltage VGS(th) -1.3 -1.8 -2.3 V VDS=VGS, ID=-250µA 2
Static Drain-Source On-Resistance RDS(ON) 14 17 mΩ VGS=-10V, ID=-11A 2
Static Drain-Source On-Resistance RDS(ON) 20 24 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 23.5 30 mΩ VGS=-4.5V, ID=-8A 2
Diode Forward Voltage VSD -0.72 -1 V IS=-1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS -4 A 2
Gate resistance Rg 5 10 Ω f=1MHz 2
Total Gate Charge (10V) Qg 21 34 nC VGS=-10V, VDS=-15V, ID=-11A 2
Total Gate Charge (4.5V) Qg 11 18 nC 2

CAD (KiCad official)

  • Symbol: AOSP21321
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: aosp21321-etched.step / aosp21321-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aosp21321.step / aosp21321.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (5 pp, sha256 b6003a32e36eda55, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF