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AOSD62666E

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Alpha Omega Semicon MOSFETs, SOIC-8. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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AOSD62666E

Alpha Omega Semicon · MOSFETs · SOIC-8

AOSD62666E from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (N-channel, 60V VDS rating).
2 G2 input Gate of MOSFET 2, logic-level drive with RDS(ON) specified at VGS=4.5V and 10V, absolute maximum VGS ±20V, ESD protected.
3 S1 passive Source of MOSFET 1 (N-channel, 60V VDS rating).
4 G1 input Gate of MOSFET 1, logic-level drive with RDS(ON) specified at VGS=4.5V and 10V, absolute maximum VGS ±20V, ESD protected.
5 D1 passive Drain of MOSFET 1, 60V maximum VDS and 9.5A continuous drain current at TA=25°C.
6 D1 passive Drain of MOSFET 1, 60V maximum VDS and 9.5A continuous drain current at TA=25°C.
7 D2 passive Drain of MOSFET 2, 60V maximum VDS and 9.5A continuous drain current at TA=25°C.
8 D2 passive Drain of MOSFET 2, 60V maximum VDS and 9.5A continuous drain current at TA=25°C.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V ID=250µA, VGS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS, ID=250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=60V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA TJ=55°C 2
Gate-Body Leakage Current IGSS -10 10 µA VDS=0V, VGS=±20V 2
Static Drain-Source On-Resistance RDS(ON) 12 14.5 mΩ VGS=10V, ID=9.5A 2
Static Drain-Source On-Resistance RDS(ON) 19.2 23.5 mΩ TJ=125°C, VGS=10V, ID=9.5A 2
Static Drain-Source On-Resistance RDS(ON) 15.3 19 mΩ VGS=4.5V, ID=8.5A 2
Diode Forward Voltage VSD 0.72 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 3.5 A 2
Gate Resistance Rg 0.6 1.3 2 Ω f=1MHz 2
Total Gate Charge (10V) Qg (10V) 13.5 20 nC VGS=10V, VDS=30V, ID=9.5A 2
Total Gate Charge (4.5V) Qg (4.5V) 6.5 10 nC 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9.5 A TA=25°C, t ≤ 10s 1
Pulsed Drain Current IDM 30 A 1
Avalanche Current IAS 14 A L=0.3mH 1
Avalanche Energy EAS 29 mJ L=0.3mH 1
Power Dissipation PD 2.5 W TA=25°C 1
Power Dissipation PD 1.6 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 42 50 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 70 85 °C/W Steady-State 1
Maximum Junction-to-Lead RθJL 30 40 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AOSD62666E
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: aosd62666e-etched.step / aosd62666e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aosd62666e.step / aosd62666e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256 e5fdce8c9582307a, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF