# AONS66920

**Alpha & Omega Semicon** · MOSFETs · DFN-8(5x6)

AONS66920 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, with package-level ratings of VDS 100V and VGS ±20V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with package-level ratings of VDS 100V and VGS ±20V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with package-level ratings of VDS 100V and VGS ±20V. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated ±20V and gate resistance Rg typically 1.1Ω. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, rated for drain-source voltage 100V with ID 48A at VGS=10V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, rated for drain-source voltage 100V with ID 48A at VGS=10V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, rated for drain-source voltage 100V with ID 48A at VGS=10V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, rated for drain-source voltage 100V with ID 48A at VGS=10V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | ID=250mA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS |  |  | 5 | μA | VDS=100V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 6.7 | 8.2 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) |  | 11.6 | 14 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.5 | 10.7 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS |  | 65 |  | S | VDS=5V, ID=20A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 48 | A |  | 2 |
| Gate resistance | Rg | 0.5 | 1.1 | 1.8 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 35 | 50 | nC | VGS=10V, VDS=50V, ID=20A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 16.7 | 25 | nC | VGS=4.5V, VDS=50V, ID=20A | 2 |
| Input Capacitance | Ciss |  | 2500 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 485 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 13 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Gate Source Charge | Qgs |  | 8 |  | nC | VGS=10V, VDS=50V, ID=20A | 2 |
| Gate Drain Charge | Qgd |  | 5 |  | nC | VGS=10V, VDS=50V, ID=20A | 2 |
| Output Charge | Qoss |  | 44 |  | nC | VGS=0V, VDS=50V | 2 |
| Turn-On DelayTime | tD(on) |  | 10 |  | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 4 |  | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 31 |  | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 6 |  | ns | VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 34 |  | ns | IF=20A, di/dt=500A/ms | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 170 |  | nC | IF=20A, di/dt=500A/ms | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Power Dissipation | PD |  |  | 56.5 | W | TC=25°C | 1 |
| Power Dissipation | PD |  |  | 22.5 | W | TC=100°C | 1 |
| Power Dissipation | PDSM |  |  | 5 | W | TA=25°C | 1 |
| Power Dissipation | PDSM |  |  | 3.2 | W | TA=70°C | 1 |
| Single Pulse Avalanche energy | EAS |  |  | 72 | mJ | L=0.1mH | 1 |
| Maximum Junction-to-Case (steady-state) | RθJC |  |  | 2.2 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Ambient (steady-state) | RθJA |  |  | 55 | °C/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `AONS66920`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aons66920-etched.step` / `aons66920-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aons66920.step` / `aons66920.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aons66920-datasheet.pdf) (6 pp, sha256 `298056feeb91dc36`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aons66920-datasheet.pdf)