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AONS66917

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Alpha & Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AONS66917

Alpha & Omega Semicon · MOSFETs · DFN-8(5x6)

AONS66917 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 100V N-channel MOSFET; pin 1 is the marked corner on the DFN5x6 top view.
2 S passive Source terminal of the 100V N-channel MOSFET, bonded in parallel with the other source pins.
3 S passive Source terminal of the 100V N-channel MOSFET, bonded in parallel with the other source pins.
4 G input Gate terminal of the MOSFET; the datasheet specifies a gate-source voltage rating of ±20 V.
5 D passive Drain terminal of the MOSFET; the datasheet specifies a drain-source voltage rating of 100 V.
6 D passive Drain terminal of the MOSFET, bonded in parallel with the other drain pins.
7 D passive Drain terminal of the MOSFET, bonded in parallel with the other drain pins.
8 D passive Drain terminal of the MOSFET, bonded in parallel with the other drain pins.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 100 A TC=25°C 1
Continuous Drain Current ID 65 A TC=100°C 1
Pulsed Drain Current IDM 320 A 1
Avalanche energy EAS 211 mJ L=0.1mH 1
Power Dissipation PD 215 W TC=25°C 1
Power Dissipation PD 86 W TC=100°C 1
Power Dissipation PDSM 6.2 W TA=25°C 1
Power Dissipation PDSM 4 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Case Thermal Resistance (steady-state) RqJC 0.43 0.58 °C/W Steady-State 1
Maximum Junction-to-Ambient Thermal Resistance (t≤10s) RqJA 15 20 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient Thermal Resistance (steady-state) RqJA 40 50 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 100 V ID=250mA, VGS=0V 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.7 2.2 2.8 V VDS=VGS, ID=250mA 2
Static Drain-Source On-Resistance RDS(ON) 2.9 3.5 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 3.9 5 mΩ VGS=4.5V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 4.8 5.8 mΩ TJ=125°C 2
Diode Forward Voltage VSD 0.68 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 100 A 2
Gate resistance Rg 0.3 0.6 1 Ω f=1MHz 2
Total Gate Charge (10V) Qg 80 115 nC VGS=10V, VDS=50V, ID=20A 2
Total Gate Charge (4.5V) Qg 35 50 nC VGS=4.5V, ID=20A 2

CAD (KiCad official)

  • Symbol: AONS66917
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aons66917-etched.step / aons66917-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aons66917.step / aons66917.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256 fece3fefe7e8a5e8, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF