component
AONS36306
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AONS36306
Alpha Omega Semicon · MOSFETs · DFN-8(5x6)
AONS36306 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the 30V N-channel MOSFET; pin 1 is the package orientation marker (PIN1) on the top view. |
| 2 | S | passive | Source terminal of the 30V N-channel MOSFET, bonded in parallel with pins 1 and 3. |
| 3 | S | passive | Source terminal of the 30V N-channel MOSFET, bonded in parallel with pins 1 and 2. |
| 4 | G | input | Gate terminal of the MOSFET; the datasheet specifies VGS limits of ±20V (Maximum Absolute Ratings). |
| 5 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 6, 7 and 8. |
| 6 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.75 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 | 5.2 | mΩ | VGS=10V, ID=20A, TJ=25°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.4 | 7.6 | mΩ | VGS=10V, ID=20A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.6 | 8.6 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250μA, VGS=0V | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 30 | A | 2 | |||
| Gate Resistance | Rg | 0.2 | 0.6 | 1 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 17 | 30 | nC | VGS=10V, VDS=15V, ID=20A | 2 | |
| Total Gate Charge (4.5V) | Qg | 8 | 15 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| VDS Spike | VSPIKE | 36 | V | 1 | |||
| Continuous Drain Current | ID | 63 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 40 | A | TC=100°C | 1 | ||
| Continuous Drain Current (steady-state) | IDSM | 22.5 | A | TA=25°C | 1 | ||
| Pulsed Drain Current | IDM | 108 | A | 1 | |||
| Avalanche Current | IAS | 50 | A | 1 | |||
| Avalanche Energy | EAS | 12.5 | mJ | L=0.01mH | 1 | ||
| Power Dissipation | PDSM | 6.2 | W | TA=25°C | 1 | ||
| Power Dissipation | PDSM | 4 | W | TA=70°C | 1 | ||
| Power Dissipation | PD | 31 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 12.5 | W | TC=100°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 15 | 20 | °C/W | t≤10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 40 | 50 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case | RθJC | 3.1 | 4 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AONS36306 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aons36306-etched.step/aons36306-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aons36306.step/aons36306.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
82affd8bf12e246c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AONS36306
**Alpha Omega Semicon** · MOSFETs · DFN-8(5x6)
AONS36306 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the 30V N-channel MOSFET; pin 1 is the package orientation marker (PIN1) on the top view. |
| 2 | S | passive | Source terminal of the 30V N-channel MOSFET, bonded in parallel with pins 1 and 3. |
| 3 | S | passive | Source terminal of the 30V N-channel MOSFET, bonded in parallel with pins 1 and 2. |
| 4 | G | input | Gate terminal of the MOSFET; the datasheet specifies VGS limits of ±20V (Maximum Absolute Ratings). |
| 5 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 6, 7 and 8. |
| 6 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal of the 30V N-channel MOSFET, bonded in parallel with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.75 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.8 | 5.2 | mΩ | VGS=10V, ID=20A, TJ=25°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5.4 | 7.6 | mΩ | VGS=10V, ID=20A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5.6 | 8.6 | mΩ | VGS=4.5V, ID=20A | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 1 | | μA | VDS=30V, VGS=0V, TJ=25°C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250μA, VGS=0V | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 30 | A | | 2 |
| Gate Resistance | Rg | 0.2 | 0.6 | 1 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | | 17 | 30 | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Total Gate Charge (4.5V) | Qg | | 8 | 15 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| VDS Spike | VSPIKE | | | 36 | V | | 1 |
| Continuous Drain Current | ID | | | 63 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | 40 | A | TC=100°C | 1 |
| Continuous Drain Current (steady-state) | IDSM | | | 22.5 | A | TA=25°C | 1 |
| Pulsed Drain Current | IDM | | | 108 | A | | 1 |
| Avalanche Current | IAS | | | 50 | A | | 1 |
| Avalanche Energy | EAS | | | 12.5 | mJ | L=0.01mH | 1 |
| Power Dissipation | PDSM | | | 6.2 | W | TA=25°C | 1 |
| Power Dissipation | PDSM | | | 4 | W | TA=70°C | 1 |
| Power Dissipation | PD | | | 31 | W | TC=25°C | 1 |
| Power Dissipation | PD | | | 12.5 | W | TC=100°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | 15 | 20 | °C/W | t≤10s | 1 |
| Maximum Junction-to-Ambient | RθJA | | 40 | 50 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Case | RθJC | | 3.1 | 4 | °C/W | Steady-State | 1 |
## CAD (KiCad official)
- Symbol: `AONS36306`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aons36306-etched.step` / `aons36306-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aons36306.step` / `aons36306.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590891309257879552) (6 pp, sha256 `82affd8bf12e246c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aons36306-datasheet.pdf)