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AON6576-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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AON6576-HXY

HXY MOSFET · MOSFETs · DFN5x6-8L

AON6576-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1 marked on package); tie with pins 2 and 3.
2 S passive Source terminal of the N-channel MOSFET; tie with pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET; tie with pins 1 and 2.
4 G input Gate terminal; absolute maximum VGS is ±20 V and threshold is 1.2 to 2.5 V.
5 D passive Drain terminal, connected to the exposed drain pad; VDS max 30 V, continuous ID 60 A at TC=25℃.
6 D passive Drain terminal, connected to the exposed drain pad; VDS max 30 V.
7 D passive Drain terminal, connected to the exposed drain pad; VDS max 30 V.
8 D passive Drain terminal, connected to the exposed drain pad; VDS max 30 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 60 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 38 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 135 A 1
Single Pulse Avalanche Energy EAS 29.8 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=24A (footnote 3) 1
Total Power Dissipation PD@TC=25℃ 30 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 4.6 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 50 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.4 5.8 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 6.9 9 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 60 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AON6576-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: aon6576-hxy-etched.step / aon6576-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6576-hxy.step / aon6576-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 a05a9f33c3c1daa8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF