component

AON6450-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaon6450-vbfactory-2.0.0extractor-text

Verified AON6450-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AON6450-VB · DFN5x6-8 · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-o0aofonb/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ aon6450-vb.kicad_sym✓ aon6450-vb.kicad_mod✓ aon6450-vb.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 4d ago
viewers aon6450-vb: viewers · Ray 4d ago
aon6450-vb-etched.glb Publish 0.1.0 · Ray 4d ago
aon6450-vb-etched.step aon6450-vb: factory component page (tier=lcsc) · Ray 4d ago
aon6450-vb-hero.glb aon6450-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
aon6450-vb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
aon6450-vb.glb Publish 0.1.0 · Ray 4d ago
aon6450-vb.kicad_mod Publish 0.1.0 · Ray 4d ago
aon6450-vb.kicad_sym Publish 0.1.0 · Ray 4d ago
aon6450-vb.lbr Publish 0.1.0 · Ray 4d ago
aon6450-vb.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 9 pins · Ray 4d ago

AON6450-VB

VBsemi Elec · MOSFETs · DFN5x6-8

AON6450-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1 marked with dot); drain-source voltage rated 100 V.
2 S passive Source terminal of the N-channel MOSFET; continuous source-drain diode current 60 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET; connect in parallel with the other source pins.
4 G input Gate terminal; gate-source voltage limit is ±20 V with threshold of 3 V to 5 V at ID = 250 µA.
5 D passive Drain terminal of the N-channel MOSFET; continuous drain current 65 A at TC = 25 °C.
6 D passive Drain terminal of the N-channel MOSFET; pulsed drain current 180 A (t = 100 µs).
7 D passive Drain terminal of the N-channel MOSFET; connect in parallel with the other drain pins.
8 D passive Drain terminal of the N-channel MOSFET; drain-source breakdown voltage minimum 100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 65 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 60 A TC = 70 °C 1
Continuous drain current ID 20 A TA = 25 °C; notes b, c 1
Continuous drain current ID 18.5 A TA = 70 °C; notes b, c 1
Pulsed drain current IDM 180 A t = 100 μs 1
Continuous source-drain diode current IS 60 A TC = 25 °C 1
Continuous source-drain diode current IS 4.8 A TA = 25 °C; notes b, c 1
Single pulse avalanche current IAS 30 A L = 0.1 mH 1
Single pulse avalanche energy EAS 40 mJ 1
Maximum power dissipation PD 80 W TC = 25 °C 1
Maximum power dissipation PD 50 W TC = 70 °C 1
Maximum power dissipation PD 5 W TA = 25 °C; notes b, c 1
Maximum power dissipation PD 3.2 W TA = 70 °C; notes b, c 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 260 °C note c 1
Maximum junction-to-ambient RthJA 20 25 °C/W t ≤ 10 s; notes b, c 1
Maximum junction-to-case (drain), steady state RthJC 1.6 2 °C/W Steady state 1
Drain-source breakdown voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 3 5 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 100 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 15 μA VDS = 100 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) 40 A VDS ≥ 10 V, VGS = 10 V 2
Gate resistance Rg 0.2 0.76 1.4 Ω f = 1 MHz 2
Turn-on delay time td(on) 12 24 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Rise time tr 5 10 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Turn-off delay time td(off) 19 38 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Fall time tf 5 10 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Turn-on delay time td(on) 15 30 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 7.5 V, Rg = 1 2
Rise time tr 6 12 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 7.5 V, Rg = 1 2
Continuous source-drain diode current IS 60 A TC = 25 °C 2
Pulse diode forward current ISM 80 A 2
Body diode voltage VSD 0.78 1.1 V IS = 5 A, VGS = 0 V 2
Body diode reverse recovery time trr 43 86 ns IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 72 144 nC IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2
VDS temperature coefficient VDS/TJ 81 mV/°C ID = 10 mA 2
VGS(th) temperature coefficient VGS(th) -7.5 mV/°C ID = 250 μA 2
Drain-source on-state resistance RDS(on) 0.009 Ω VGS = 10 V, ID = 10 A 2
Drain-source on-state resistance RDS(on) 0.012 Ω VGS = 7.5 V, ID = 10 A 2
Forward transconductance gfs 46 S VDS = 15 V, ID = 10 A 2
Input capacitance Ciss 3970 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 132 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 11.2 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Total gate charge Qg 20 nC VDS = 50 V, VGS = 10 V, ID = 10 A 2
Total gate charge Qg 15 nC VDS = 50 V, VGS = 7.5 V, ID = 10 A 2
Gate-source charge Qgs 6.45 nC 2
Gate-drain charge Qgd 3.5 nC 2
Output charge Qoss 22 nC VDS = 50 V, VGS = 0 V 2
Reverse recovery fall time ta 33 ns 2
Reverse recovery rise time tb 10 ns 2

CAD (KiCad official)

  • Symbol: AON6450-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: aon6450-vb-etched.step / aon6450-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6450-vb.step / aon6450-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 3f22604758100864, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF