# AON6435

**Alpha & Omega Semicon** · MOSFETs · DFN-8(5x6)

AON6435 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pin 1 is marked by the dot on the package. |
| 2 | S | passive | Source of the P-channel MOSFET. |
| 3 | S | passive | Source of the P-channel MOSFET. |
| 4 | G | input | Gate of the P-channel MOSFET; the maximum gate-source voltage is ±25V. |
| 5 | D | passive | Drain of the P-channel MOSFET; the drain-source voltage is rated at -30V. |
| 6 | D | passive | Drain of the P-channel MOSFET. |
| 7 | D | passive | Drain of the P-channel MOSFET. |
| 8 | D | passive | Drain of the P-channel MOSFET. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -25 |  | 25 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -34 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | -21.5 | A | TC=100°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Case Steady-State | RθJC |  |  | 4 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Ambient | RθJA |  |  | 64 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID=-250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±25V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.7 | -2.3 | -3 | V | VDS=VGS, ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 13 | 17 | mΩ | VGS=-10V, ID=-20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 19 | 25 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 25 | 34 | mΩ | VGS=-5V, ID=-15A | 2 |
| Diode Forward Voltage | VSD |  | -0.73 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -35 | A |  | 2 |
| Input Capacitance | Ciss |  | 1130 | 1400 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Gate resistance | Rg |  | 5.8 | 8 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |

## CAD (KiCad official)

- Symbol: `AON6435`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aon6435-etched.step` / `aon6435-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6435.step` / `aon6435.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590903682680901632) (7 pp, sha256 `1a837cd32226dcd4`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aon6435-datasheet.pdf)