component
AON6407-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| docs | 17d ago |
| viewers | 17d ago |
| aon6407-hxy-etched.glb | 17d ago |
| aon6407-hxy-etched.step | 17d ago |
| aon6407-hxy-hero.glb | 17d ago |
| aon6407-hxy-hero.overlay.json | 17d ago |
| aon6407-hxy.glb | 17d ago |
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| README.md | 17d ago |
AON6407-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
AON6407-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, rated for VDS = -30V with continuous drain current ID = -100A at TC = 25℃ (pin mapping inferred from the pin diagram sequence, see review_required). |
| 2 | S | passive | Source terminal of the P-channel MOSFET, rated for VDS = -30V with continuous drain current ID = -100A at TC = 25℃ (pin mapping inferred from the pin diagram sequence, see review_required). |
| 3 | S | passive | Source terminal of the P-channel MOSFET, rated for VDS = -30V with continuous drain current ID = -100A at TC = 25℃ (pin mapping inferred from the pin diagram sequence, see review_required). |
| 4 | G | input | Gate terminal, with gate-source voltage limited to ±20V and threshold voltage VGS(th) between -1.2V and -2.5V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30V with continuous drain current ID = -100A at TC = 25℃ (pin mapping inferred from the pin diagram sequence, see review_required). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30V with continuous drain current ID = -100A at TC = 25℃ (pin mapping inferred from the pin diagram sequence, see review_required). |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30V with continuous drain current ID = -100A at TC = 25℃ (pin mapping inferred from the pin diagram sequence, see review_required). |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30V with continuous drain current ID = -100A at TC = 25℃ (pin mapping inferred from the pin diagram sequence, see review_required). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -100 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -70 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -250 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | VDD=-50V, VGS=-10V, L=0.1mH, IAS=-40A | 1 | ||
| Avalanche Current | IAS | -70 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 120 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.6 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4 | mΩ | VGS=-10V, ID=-20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6 | mΩ | VGS=-4.5V, ID=-15A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -100 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AON6407-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6407-hxy-etched.step/aon6407-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6407-hxy.step/aon6407-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
e00a1d00152ff477, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).