component

AON6403-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaon6403-vbfactory-2.0.0extractor-text

Verified AON6403-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AON6403-VB · DFN5x6-8 · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-f0ewg_8g/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ aon6403-vb.kicad_sym✓ aon6403-vb.kicad_mod✓ aon6403-vb.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers aon6403-vb: viewers · Ray 4d ago
aon6403-vb-etched.glb Publish 0.1.0 · Ray 4d ago
aon6403-vb-etched.step aon6403-vb: factory component page (tier=lcsc) · Ray 4d ago
aon6403-vb-hero.glb aon6403-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
aon6403-vb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
aon6403-vb.glb Publish 0.1.0 · Ray 4d ago
aon6403-vb.kicad_mod Publish 0.1.0 · Ray 4d ago
aon6403-vb.kicad_sym Publish 0.1.0 · Ray 4d ago
aon6403-vb.lbr Publish 0.1.0 · Ray 4d ago
aon6403-vb.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 9 pins · Ray 4d ago

AON6403-VB

VBsemi Elec · MOSFETs · DFN5x6-8

AON6403-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; the drain-source voltage rating is -30 V.
2 S passive Source of the P-channel MOSFET; the drain-source voltage rating is -30 V.
3 S passive Source of the P-channel MOSFET; the drain-source voltage rating is -30 V.
4 G input Gate of the P-channel MOSFET; the gate-source voltage rating is ±20 V.
5 D passive Drain of the P-channel MOSFET; continuous drain current is -100 A at TC = 25 °C (package limited) and pulsed drain current is -300 A.
6 D passive Drain of the P-channel MOSFET; continuous drain current is -100 A at TC = 25 °C (package limited) and pulsed drain current is -300 A.
7 D passive Drain of the P-channel MOSFET; continuous drain current is -100 A at TC = 25 °C (package limited) and pulsed drain current is -300 A.
8 D passive Drain of the P-channel MOSFET; continuous drain current is -100 A at TC = 25 °C (package limited) and pulsed drain current is -300 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -100 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -75 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current ID -31.6 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID -25.3 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM -300 A 1
Continuous Source-Drain Diode Current IS -60 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -5.6 A TA = 25 °C (notes b, c) 1
Single Pulse Avalanche Current IAS -40 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 80 mJ 1
Maximum Power Dissipation PD 104 W TC = 25 °C 1
Maximum Power Dissipation PD 66.6 W TC = 70 °C 1
Maximum Power Dissipation PD 6.25 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 4 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 notes d, e 1
Maximum Junction-to-Ambient RthJA 15 20 °C/W t ≤ 10 s (notes b, f) 1
Maximum Junction-to-Ambient (steady state) RthJA 54 °C/W steady state (note f) 1
Maximum Junction-to-Case (Drain), Steady State RthJC 0.9 1.2 °C/W steady state 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.0032 Ω VGS = -10 V, ID = -20 A 2
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = -4.5 V, ID = -15 A 2
Total Gate Charge Qg 167 250 nC VDS = -15 V, VGS = -10 V, ID = -20 A 2
Total Gate Charge Qg 78 120 nC VDS = -15 V, VGS = -4.5 V, ID = -20 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 15 30 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 110 170 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 30 50 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 110 170 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 100 150 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 100 150 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 50 75 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1.0 A, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 60 A TC = 25 °C 2
Body Diode Voltage VSD -0.74 -1.1 V IS = -5 A 2
Body Diode Reverse Recovery Time trr 50 100 ns IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 65 130 nC IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper d. The DFN5x6 is a leadless package. The end of the lead terminal is exposed copper (not pl 1

CAD (KiCad official)

  • Symbol: AON6403-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: aon6403-vb-etched.step / aon6403-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6403-vb.step / aon6403-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 fd7dc6961b8109b3, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF