# AON6382

**Alpha & Omega Semicon** · MOSFETs · DFN-8(5x6)

AON6382 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3 to the power return path. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3 to the power return path. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2 to the power return path. |
| 4 | G | input | Gate of the MOSFET, with a maximum gate-source voltage of ±20V. |
| 5 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 6-8. |
| 6 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the MOSFET, rated for 30V drain-source voltage and connected with pins 5-7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.75 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Gate resistance | Rg | 1.1 | 2.3 | 3.5 | Ω | f=1MHz | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | TJ=55°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 1.5 | 1.85 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) |  | 2 | 2.45 | mΩ | TJ=125°C, VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2 | 2.5 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS |  | 125 |  | S | VDS=5V, ID=20A | 2 |
| Diode Forward Voltage | VSD |  | 0.68 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 60 | A |  | 2 |
| Input Capacitance | Ciss |  | 3100 |  | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 875 |  | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 105 |  | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 43 | 65 | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 20 | 30 | nC |  | 2 |
| Gate Source Charge | Qgs |  | 8.5 |  | nC |  | 2 |
| Gate Drain Charge | Qgd |  | 6 |  | nC |  | 2 |
| Turn-On DelayTime | tD(on) |  | 11.5 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 5 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 40 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 8 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 17 |  | ns | IF=20A, di/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 36 |  | nC | IF=20A, di/dt=500A/µs | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Pulsed Drain Current | IDM |  |  | 260 | A | Note C: single pulse width limited by TJ(MAX)=150°C | 1 |
| Power Dissipation (TA=25°C) | PDSM |  |  | 6.2 | W | TA=25°C | 1 |
| Power Dissipation (TA=70°C) | PDSM |  |  | 4 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (steady-state) | RθJA |  |  | 50 | °C/W | Steady-State, device on 1in2 FR-4, still air, TA=25°C | 1 |
| Maximum Junction-to-Case (steady-state) | RθJC |  |  | 2.5 | °C/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `AON6382`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aon6382-etched.step` / `aon6382-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6382.step` / `aon6382.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aon6382-datasheet.pdf) (6 pp, sha256 `949ededdb0aaa93a`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aon6382-datasheet.pdf)