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AON6380

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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AON6380

Alpha Omega Semicon · MOSFETs · DFN-8(5x6)

AON6380 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; VDS max 30V and continuous drain current 24A (package limited).
2 S passive Source terminal of the N-channel MOSFET, shared with pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, shared with pins 1 and 2.
4 G input Gate terminal with maximum gate-source voltage of ±20V; RDS(ON) below 6.8mΩ at VGS=10V.
5 D passive Drain terminal, tied with pins 6-8; maximum drain-source voltage 30V.
6 D passive Drain terminal, tied with pins 5, 7 and 8.
7 D passive Drain terminal, tied with pins 5, 6 and 8.
8 D passive Drain terminal, tied with pins 5-7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.4 1.8 2.2 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 5.6 6.8 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 8.1 9.8 mΩ VGS=10V, ID=20A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 8.2 10.5 mΩ VGS=4.5V, ID=20A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 24 A 2
Gate resistance Rg 0.6 1.2 1.8 Ω f=1MHz 2
Total Gate Charge (10V) Qg 13 25 nC VGS=10V, VDS=15V, ID=20A 2
Total Gate Charge (4.5V) Qg 6.2 12 nC VGS=4.5V, VDS=15V, ID=20A 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Power Dissipation PD 25 W TC=25°C 1
Power Dissipation PD 10.5 W TC=100°C 1
Power Dissipation PDSM 5 W TA=25°C 1
Power Dissipation PDSM 3.2 W TA=70°C 1
Maximum Junction-to-Ambient RθJA 20 25 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 45 55 °C/W Steady-State 1
Maximum Junction-to-Case RθJC 3.8 4.8 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AON6380
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aon6380-etched.step / aon6380-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6380.step / aon6380.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 f922869a881dd7f7, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF