component
AON6362-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| docs | 14d ago |
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| aon6362-hxy-etched.step | 14d ago |
| aon6362-hxy-hero.glb | 14d ago |
| aon6362-hxy-hero.overlay.json | 14d ago |
| aon6362-hxy.glb | 14d ago |
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| aon6362-hxy.lbr | 14d ago |
| aon6362-hxy.step | 14d ago |
| package.json | 14d ago |
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| README.md | 14d ago |
AON6362-HXY
HXY MOSFET · MOSFETs · DFN5X6-8L
AON6362-HXY from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, pin 1 marked on the package drawing; VDS rated 30V. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with the other source pins. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with the other source pins. |
| 4 | G | input | Gate of the N-channel MOSFET, with absolute maximum VGS of ±20V and threshold of 1.2V to 2.5V. |
| 5 | D | passive | Drain of the N-channel MOSFET, connected to the exposed drain pad; continuous ID of 60A at TC=25℃. |
| 6 | D | passive | Drain of the N-channel MOSFET, connected to the exposed drain pad; pulsed IDM of 160A. |
| 7 | D | passive | Drain of the N-channel MOSFET, connected to the exposed drain pad; VDS rated 30V. |
| 8 | D | passive | Drain of the N-channel MOSFET, connected to the exposed drain pad; RDS(ON) below 7mΩ at VGS=10V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 60 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 42 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 115.2 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=48A (note 3) | 1 | ||
| Avalanche Current | IAS | 48 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 59 | W | TC=25℃ (note 4: limited by 150℃ junction temperature) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.1 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 5.7 | 7 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 13 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 81 | A | VG=VD=0V, Force Current (notes 1,5) | 2 | ||
| Pulsed Source Current | ISM | 160 | A | notes 2,5 | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AON6362-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
aon6362-hxy-etched.step/aon6362-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6362-hxy.step/aon6362-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
8929c2b491e1e81a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).