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AON6358

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AON6358

Alpha Omega Semicon · MOSFETs · DFN5x6-8

AON6358 from Alpha Omega Semicon, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1, marked by the dot); pins 1-3 are source.
2 S passive Source terminal of the N-channel MOSFET; pins 1-3 are source.
3 S passive Source terminal of the N-channel MOSFET; pins 1-3 are source.
4 G input Gate terminal; gate-source voltage is rated ±20V maximum.
5 D passive Drain terminal; drain-source voltage is rated 30V maximum, and pins 5-8 are drain.
6 D passive Drain terminal; drain-source voltage is rated 30V maximum, and pins 5-8 are drain.
7 D passive Drain terminal; drain-source voltage is rated 30V maximum, and pins 5-8 are drain.
8 D passive Drain terminal; drain-source voltage is rated 30V maximum, and pins 5-8 are drain.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 85 A TC=25°C 1
Pulsed Drain Current IDM 230 A 1
Avalanche energy EAS 63 mJ L=0.05mH 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Power Dissipation A PDSM 6.2 W TA=25°C 1
Power Dissipation A PDSM 4 W TA=70°C 1
Maximum Junction-to-Ambient (t≤10s) RθJA 15 20 °C/W t≤10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 40 50 °C/W Steady-State 1
Maximum Junction-to-Case (Steady-State) RθJC 2.1 2.6 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.4 1.8 2.2 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 1.8 2.2 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 2.8 3.6 mΩ VGS=4.5V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 2.6 3.2 mΩ VGS=10V, ID=20A, TJ=125°C 2
Gate resistance Rg 0.9 1.9 2.9 Ω f=1MHz 2
Total Gate Charge (10V) Qg 33 47 nC VGS=10V, VDS=15V, ID=20A 2
Total Gate Charge (4.5V) Qg 15 21 nC VGS=4.5V, VDS=15V, ID=20A 2
Diode Forward Voltage VSD 0.67 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 60 A 2

CAD (KiCad official)

  • Symbol: AON6358
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: aon6358-etched.step / aon6358-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6358.step / aon6358.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 15bba4cdcb25feb1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF