# AON6354-HXY

**HXY MOSFET** · MOSFETs · DFN5x6-8L

AON6354-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source; the drain-source voltage is rated 30 V and the continuous drain current is 120 A at TC=25°C. |
| 2 | S | passive | Source; the drain-source voltage is rated 30 V and the continuous drain current is 120 A at TC=25°C. |
| 3 | S | passive | Source; the drain-source voltage is rated 30 V and the continuous drain current is 120 A at TC=25°C. |
| 4 | G | input | Gate; the gate-source voltage is rated ±20 V, the threshold is 1 to 2.5 V, and the part works with gate drive as low as 4.5 V. |
| 5 | D | passive | Drain; the drain-source voltage is rated 30 V, the pulsed drain current is 360 A, and RDS(ON) is below 2.6 mΩ at VGS=10 V. |
| 6 | D | passive | Drain; the drain-source voltage is rated 30 V, the pulsed drain current is 360 A, and RDS(ON) is below 2.6 mΩ at VGS=10 V. |
| 7 | D | passive | Drain; the drain-source voltage is rated 30 V, the pulsed drain current is 360 A, and RDS(ON) is below 2.6 mΩ at VGS=10 V. |
| 8 | D | passive | Drain; the drain-source voltage is rated 30 V, the pulsed drain current is 360 A, and RDS(ON) is below 2.6 mΩ at VGS=10 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | TC=25°C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25°C | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 120 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 57 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 360 | A | TC=25°C | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 125 | mJ | TC=25°C | 1 |
| Total Power Dissipation | PD |  |  | 115 | W | TC=25°C | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 1.3 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS=0V, VDS=30V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 2.6 | 3.3 | mΩ | VGS=10V,ID=20A | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 3.8 | 5 | mΩ | VGS=4.5V,ID=10A | 2 |
| Source-Drain Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V,IS=1A | 2 |
| Continuous Source Current | IS |  |  | 120 | A |  | 2 |
| Pulsed Source Current | ISM |  |  | 360 | A |  | 2 |
| Input Capacitance | Ciss |  | 2218 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 480 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 340 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) |  | 12.6 |  | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Rise Time | tr |  | 19.5 |  | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Turn-Off Delay Time | td(off) |  | 42.8 |  | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Fall Time | tf |  | 13.2 |  | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 |
| Total Gate Charge | Qg |  | 24 |  | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Gate-Source Charge | Qgs |  | 4.2 |  | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Gate-Drain Miller Charge | Qgd |  | 13 |  | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Reverse Recovery Time | Trr |  | 258 |  | NS | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 324 |  | NC | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `AON6354-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `aon6354-hxy-etched.step` / `aon6354-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6354-hxy.step` / `aon6354-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/aon6354-hxy-datasheet.pdf) (6 pp, sha256 `bab3c3bcefa4ec03`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aon6354-hxy-datasheet.pdf)