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AON6312-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5X6-8L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs aon6312-hxy: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers aon6312-hxy: viewers · Ray 1mo ago
aon6312-hxy-etched.fit.json aon6312-hxy: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
aon6312-hxy-etched.glb aon6312-hxy: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
aon6312-hxy-etched.step aon6312-hxy: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
aon6312-hxy.glb Publish 0.1.0 · Ray 1mo ago
aon6312-hxy.kicad_mod Publish 0.1.0 · Ray 1mo ago
aon6312-hxy.kicad_sym Publish 0.1.0 · Ray 1mo ago
aon6312-hxy.lbr Publish 0.1.0 · Ray 1mo ago
aon6312-hxy.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json aon6312-hxy: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 19d ago
README.md aon6312-hxy: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 19d ago

AON6312-HXY

HXY MOSFET · MOSFETs · DFN5X6-8L

AON6312-HXY from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET. Pins 1, 2, 3 are internally connected to the source. Continuous source current up to 150A (package limitation 85A).
2 S passive Source terminal of the N-channel MOSFET. Internally tied to pins 1 and 3. Recommended to connect all source pins in parallel for full current handling.
3 S passive Source terminal of the N-channel MOSFET. Internally tied to pins 1 and 2.
4 G input Gate terminal. Controls the MOSFET channel. VGS(th) = 1.2 to 2.5V; absolute maximum VGS = ±20V. Typical gate charge Qg = 56.9 nC at VGS = 10V.
5 D passive Drain terminal of the N-channel MOSFET. Pins 5, 6, 7, 8 are internally connected to the drain and also to the exposed thermal pad on the underside of the package.
6 D passive Drain terminal of the N-channel MOSFET. Internally tied to pins 5, 7, 8 and the exposed thermal pad. VDS = 30V max.
7 D passive Drain terminal of the N-channel MOSFET. Internally tied to pins 5, 6, 8 and the exposed thermal pad.
8 D passive Drain terminal of the N-channel MOSFET. Internally tied to pins 5, 6, 7 and the exposed thermal pad. All drain pins should be connected in parallel for full current handling.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 8

Ordering variants

Same part, different packaging or reel option.

  • AON6312-HXY

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.4 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 3.2 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 150 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 150 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 80 A VGS @ 10V 1
Pulsed Drain Current IDM 160 A 1
Single Pulse Avalanche Energy EAS 180 mJ 1
Avalanche Current IAS 60 A 1
Total Power Dissipation PD@TC=25℃ 187 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 1.1 ℃/W 1

CAD (KiCad official)

  • Symbol: AON6312-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: aon6312-hxy-etched.step / aon6312-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6312-hxy.step / aon6312-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (None pp, sha256 01beab122b81a006, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF