component
aon6292-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
aon6292-VB
VBsemi Elec · MOSFETs · DFN5x6-8
aon6292-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pin 1 marked by the dot on the package. |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 6 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 7 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 8 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Pulsed Drain Current | IDM | 315 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC = 100 °C, TJ = 175 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 170 | A | 1 | |||
| Avalanche Current | IAS | 60 | A | 1 | |||
| Single Avalanche Energy | EAS | 110 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (t ≤ 10 s) | RthJA | 15 | 18 | °C/W | t ≤ 10 sec | 1 | |
| Junction-to-Ambient Thermal Resistance (steady state) | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Junction-to-Case Thermal Resistance | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 30V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 30V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Forward Transconductance | gfs | 60 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Pulsed Source Current | ISM | 315 | A | TC = 25 °C | 2 | ||
| Turn-On Delay Time | td(on) | 19 | 27 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 15 | 25 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 35 | 50 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 20 | 30 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Input Capacitance | Ciss | 11000 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 470 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 225 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 17 | nC | VDS = 100 V, VGS = 10 V, ID = 50 A | 2 | ||
| Gate-Drain Charge | Qgd | 12 | nC | VDS = 100 V, VGS = 10 V, ID = 50 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.01 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.006 | Ω | VGS = 4.5 V, ID = 35 A | 2 |
CAD (KiCad official)
- Symbol:
aon6292-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
aon6292-vb-etched.step/aon6292-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6292-vb.step/aon6292-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
b8c1488f4b92771e, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# aon6292-VB
**VBsemi Elec** · MOSFETs · DFN5x6-8
aon6292-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pin 1 marked by the dot on the package. |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 6 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 7 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 8 | D | passive | Drain terminal of the 100 V N-channel MOSFET. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | 315 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 60 | A | TC = 100 °C, TJ = 175 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 170 | A | | 1 |
| Avalanche Current | IAS | | | 60 | A | | 1 |
| Single Avalanche Energy | EAS | | | 110 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 136 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance (t ≤ 10 s) | RthJA | | 15 | 18 | °C/W | t ≤ 10 sec | 1 |
| Junction-to-Ambient Thermal Resistance (steady state) | RthJA | | 40 | 50 | °C/W | Steady State | 1 |
| Junction-to-Case Thermal Resistance | RthJC | | 0.85 | 1.1 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | µA | VDS = 30V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 30V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 60 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| Forward Transconductance | gfs | | 60 | | S | VDS = 15 V, ID = 20 A | 2 |
| Pulsed Source Current | ISM | | | 315 | A | TC = 25 °C | 2 |
| Turn-On Delay Time | td(on) | | 19 | 27 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Rise Time | tr | | 15 | 25 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 35 | 50 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Fall Time | tf | | 20 | 30 | ns | VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Input Capacitance | Ciss | | 11000 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 470 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 225 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 17 | | nC | VDS = 100 V, VGS = 10 V, ID = 50 A | 2 |
| Gate-Drain Charge | Qgd | | 12 | | nC | VDS = 100 V, VGS = 10 V, ID = 50 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.008 | | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.01 | | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.006 | | Ω | VGS = 4.5 V, ID = 35 A | 2 |
## CAD (KiCad official)
- Symbol: `aon6292-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `aon6292-vb-etched.step` / `aon6292-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6292-vb.step` / `aon6292-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/aon6292-vb-datasheet.pdf) (7 pp, sha256 `b8c1488f4b92771e`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aon6292-vb-datasheet.pdf)