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AON6280

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AON6280

Alpha Omega Semicon · MOSFETs · DFN-8(5x6)

AON6280 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 80 V N-channel MOSFET; pin 1 is the package pin-1 marker position on the top view.
2 S passive Source terminal of the 80 V N-channel MOSFET, internally common with pins 1 and 3.
3 S passive Source terminal of the 80 V N-channel MOSFET, internally common with pins 1 and 2.
4 G input Gate terminal; gate-source voltage is rated ±20 V (VGS).
5 D passive Drain terminal; drain-source voltage is rated 80 V (VDS).
6 D passive Drain terminal; drain-source voltage is rated 80 V (VDS), internally common with pins 5, 7 and 8.
7 D passive Drain terminal; drain-source voltage is rated 80 V (VDS), internally common with pins 5, 6 and 8.
8 D passive Drain terminal; drain-source voltage is rated 80 V (VDS), internally common with pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Pulsed Drain Current IDM 230 A 1
Avalanche Current IAS 13 A Repetitive rating, pulse width limited by TJ(MAX)=150°C (Note C) 1
Maximum Junction-to-Ambient, t ≤ 10s RqJA 14 17 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient, Steady-State RqJA 40 55 °C/W Steady-State 1
Maximum Junction-to-Case, Steady-State RqJC 1 1.5 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 80 V ID=250mA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 mA VDS=80V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 mA VDS=80V, VGS=0V, TJ=55°C 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 2 2.6 3.2 V VDS=VGS, ID=250mA 2
On State Drain Current ID(ON) 230 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 3.4 4.1 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 5.8 7 mΩ VGS=10V, ID=20A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 4 5 mΩ VGS=6V, ID=20A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 95 A 2
Gate Resistance Rg 0.3 0.7 1.1 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 58 82 nC VGS=10V, VDS=40V, ID=20A 2

CAD (KiCad official)

  • Symbol: AON6280
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aon6280-etched.step / aon6280-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6280.step / aon6280.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 ee07aa6d80617b68, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF