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AON6250
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Tokmas MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AON6250
Tokmas · MOSFETs · DFN-8(5x6)
AON6250 from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source); VDS rated 150V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source); VDS rated 150V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source); VDS rated 150V. |
| 4 | G | input | Gate terminal; VGS rated ±20V with threshold of 2.5V to 4.5V at ID=250µA. |
| 5 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 6 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 7 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 8 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | 1 | |||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Power Dissipation | PD | 110 | W | 1 | |||
| Single pulse avalanche energy | EAS | 29 | mJ | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RƟJC | 1.14 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RƟJA | 62 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=135V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source On Resistance | RDS(ON) | 14 | 18 | mΩ | VGS=10V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, ISD=20A | 2 | ||
| Continuous Drain Current (body diode) | IS | 50 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (body diode) | ISM | 200 | A | 2 |
CAD (KiCad official)
- Symbol:
AON6250 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6250-etched.step/aon6250-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6250.step/aon6250.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (5 pp, sha256
1cac29cd3850ac72, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AON6250
**Tokmas** · MOSFETs · DFN-8(5x6)
AON6250 from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source); VDS rated 150V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source); VDS rated 150V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source); VDS rated 150V. |
| 4 | G | input | Gate terminal; VGS rated ±20V with threshold of 2.5V to 4.5V at ID=250µA. |
| 5 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 6 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 7 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 8 | D | passive | Drain terminal (pins 5-8 are drain); continuous drain current 50A, pulsed 200A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 150 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 50 | A | | 1 |
| Pulsed Drain Current | IDM | | | 200 | A | | 1 |
| Power Dissipation | PD | | | 110 | W | | 1 |
| Single pulse avalanche energy | EAS | | | 29 | mJ | | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction to Case | RƟJC | | | 1.14 | ℃/W | | 1 |
| Thermal Resistance, Junction to Ambient | RƟJA | | | 62 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS=0V, VDS=135V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | | 4.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | | 14 | 18 | mΩ | VGS=10V, ID=20A | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | VGS=0V, ISD=20A | 2 |
| Continuous Drain Current (body diode) | IS | | | 50 | A | VD=VG=0V | 2 |
| Pulsed Drain Current (body diode) | ISM | | | 200 | A | | 2 |
## CAD (KiCad official)
- Symbol: `AON6250`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aon6250-etched.step` / `aon6250-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6250.step` / `aon6250.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tokmas datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590920213657972736) (5 pp, sha256 `1cac29cd3850ac72`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aon6250-datasheet.pdf)