# AON6236

**Alpha & Omega Semicon** · MOSFETs · DFN-8(5x6)

AON6236 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pin 1 is marked by the dot on the package top view. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the same source node as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the same source node as pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±20V maximum. |
| 5 | D | passive | Drain of the MOSFET, rated at 40V VDS maximum, tied to pins 6, 7 and 8. |
| 6 | D | passive | Drain of the MOSFET, rated at 40V VDS maximum, tied to pins 5, 7 and 8. |
| 7 | D | passive | Drain of the MOSFET, rated at 40V VDS maximum, tied to pins 5, 6 and 8. |
| 8 | D | passive | Drain of the MOSFET, rated at 40V VDS maximum, tied to pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=40V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | TJ=55°C, VDS=40V, VGS=0V | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.85 | 2.4 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 120 |  |  | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 5.6 | 7 | mΩ | VGS=10V, ID=20A, TJ=25°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.4 | 10.5 | mΩ | VGS=10V, ID=20A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8 | 10.5 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS |  | 80 |  | S | VDS=5V, ID=20A | 2 |
| Diode Forward Voltage | VSD |  | 0.72 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 30 | A |  | 2 |
| Input Capacitance | Ciss |  | 1225 |  | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 318 |  | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 26.5 |  | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Gate resistance | Rg |  | 1.7 | 3 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 18.5 | 26 | nC | VGS=10V, VDS=20V, ID=20A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 8.2 | 12 | nC | VGS=4.5V, VDS=20V, ID=20A | 2 |
| Gate Source Charge | Qgs |  | 3.5 |  | nC | VGS=10V, VDS=20V, ID=20A | 2 |
| Gate Drain Charge | Qgd |  | 2.5 |  | nC | VGS=10V, VDS=20V, ID=20A | 2 |
| Turn-On DelayTime | tD(on) |  | 6 |  | ns | VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 2.8 |  | ns | VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 23.5 |  | ns | VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 3 |  | ns | VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 14 |  | ns | IF=20A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 32.5 |  | nC | IF=20A, dI/dt=500A/µs | 2 |
| Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 30 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 24 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 120 | A |  | 1 |
| Avalanche Current | IAS |  |  | 33 | A |  | 1 |
| Avalanche energy | EAS |  |  | 54 | mJ | L=0.1mH | 1 |
| Power Dissipation | PDSM |  |  | 4.2 | W | TA=25°C | 1 |
| Power Dissipation | PDSM |  |  | 2.7 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Case Steady-State | RθJC |  | 2.6 | 3.2 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 24 |  | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 53 | 64 | °C/W | Steady-State | 1 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | silver | Lead Frame Cu Die Attach Ag epoxy | 11 |

## CAD (KiCad official)

- Symbol: `AON6236`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aon6236-etched.step` / `aon6236-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6236.step` / `aon6236.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aon6236-datasheet.pdf) (12 pp, sha256 `ec2ad7a839ba1a40`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aon6236-datasheet.pdf)