# AON6236-MS

**MSKSEMI** · MOSFETs · DFN5x6-8L

AON6236-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal, labeled S on the package outline next to the PIN1 marker. |
| 2 | S | passive | Source terminal, labeled S on the package outline. |
| 3 | S | passive | Source terminal, labeled S on the package outline. |
| 4 | G | input | Gate terminal, labeled G on the package outline; VGS rated ±20V with a typical threshold of 1.6V (1.0V to 2.5V). |
| 5 | D | passive | Drain terminal, labeled D on the package outline; VDS rated 40V. |
| 6 | D | passive | Drain terminal, labeled D on the package outline; VDS rated 40V. |
| 7 | D | passive | Drain terminal, labeled D on the package outline; VDS rated 40V. |
| 8 | D | passive | Drain terminal, labeled D on the package outline; VDS rated 40V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 40 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current, ID @TC=25℃ | ID |  |  | 50 | A | VGS @ 10V | 2 |
| Continuous Drain Current, ID @TC=100℃ | ID |  |  | 38 | A | VGS @ 10V | 2 |
| Pulsed Drain Current | IDM |  |  | 160 | A |  | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 30 | mJ | Tj=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω (Note 5) | 2 |
| Storage Temperature Range | TSTG | -55 |  | 175 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 1.76 | ℃/W | Note 2: surface mounted on FR4 board, t≤10 sec | 3 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 |  |  | V | VGS=0V, ID=250μA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=40V, VGS=0V | 3 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | μA | VDS=0V, VGS=±20V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-Source on-Resistance | RDS(on) |  | 11 | 14 | mΩ | VGS=10V, ID=30A | 3 |
| Forward Transconductance | gFS | 30 |  |  | S | VDS=5V, ID=20A | 3 |
| Drain Forward Current | IS |  |  | 48 | A | Note 2 | 3 |
| Drain Forward Current (diode forward voltage) | VSD |  |  | 1.2 | V | VGS=0V, IS=30A | 3 |

## CAD (KiCad official)

- Symbol: `AON6236-MS`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `aon6236-ms-etched.step` / `aon6236-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6236-ms.step` / `aon6236-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602905509053804544) (8 pp, sha256 `b3afdb8bc6c711ad`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aon6236-ms-datasheet.pdf)