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AON6144
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAON6144
Alpha Omega Semicon · MOSFETs · DFN-8(5x6)
AON6144 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with VDS rated 40V and continuous drain current 100A at TC=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, connected in parallel with pins 1 and 3 for the 100A rated drain current at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, connected in parallel with pins 1 and 2; body-diode continuous current is 90A max. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20V with threshold of 1.4V min, 1.85V typ and 2.4V max at ID=250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with drain-source voltage rated 40V. |
| 6 | D | passive | Drain of the N-channel MOSFET, connected in parallel with pins 5, 7 and 8; pulsed drain current is 285A. |
| 7 | D | passive | Drain of the N-channel MOSFET, connected in parallel with pins 5, 6 and 8; RDS(ON) is below 2.4mΩ at VGS=10V. |
| 8 | D | passive | Drain of the N-channel MOSFET, connected in parallel with pins 5-7; RDS(ON) is below 3.5mΩ at VGS=4.5V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | ID=250µA, VGS=0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.85 | 2.4 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2 | 2.4 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3 | 3.6 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.7 | 3.5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.68 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 90 | A | 2 | |||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=40V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=40V, VGS=0V, TJ=55°C | 2 | ||
| Gate resistance | Rg | 0.3 | 0.7 | 1.1 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 50 | 70 | nC | VGS=10V, VDS=20V, ID=20A | 2 | |
| Total Gate Charge (4.5V) | Qg | 22 | 34 | nC | VGS=4.5V, VDS=20V, ID=20A | 2 | |
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 100 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 89 | A | TC=100°C | 1 | ||
| Continuous Drain Current | ID | 33 | A | TA=25°C | 1 | ||
| Continuous Drain Current | IDSM | 32 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 285 | A | Pulse width limited by TJ(MAX)=150°C | 1 | ||
| Avalanche Current | IAS | 40 | A | 1 | |||
| Avalanche energy | EAS | 163 | mJ | L=0.3mH | 1 | ||
| VDS Spike | VSPIKE | 48 | V | Spike duty cycle 5% max | 1 | ||
| Power Dissipation | PD | 78 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 31 | W | TC=100°C | 1 | ||
| Power Dissipation | PDSM | 6.2 | W | TA=25°C | 1 | ||
| Power Dissipation | PDSM | 4 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t≤10s) | RθJA | 15 | 20 | °C/W | t≤10s | 1 | |
| Maximum Junction-to-Ambient (steady-state) | RθJA | 40 | 50 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case (steady-state) | RθJC | 1.3 | 1.6 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AON6144 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6144-etched.step/aon6144-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6144.step/aon6144.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
4700b51d0194f3c6, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).