# AOE6936

**Alpha & Omega Semicon** · MOSFETs · DFN-8(5x6)

AOE6936 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of Q1 (30V, ±20V max VGS), the control MOSFET. |
| 2 | S1/D2 | passive | Common node of the Q1 source and Q2 drain. |
| 3 | D1 | passive | Drain of Q1 (30V max VDS), connected to pin 4 and the D1 bottom pad. |
| 4 | D1 | passive | Drain of Q1 (30V max VDS), connected to pin 3 and the D1 bottom pad. |
| 5 | D2/S1 | passive | Pin labeled D2/S1 in the datasheet, tied with pins 6 and 7. |
| 6 | D2/S1 | passive | Pin labeled D2/S1 in the datasheet, tied with pins 5 and 7. |
| 7 | D2/S1 | passive | Pin labeled D2/S1 in the datasheet, tied with pins 5 and 6. |
| 8 | G2 | input | Gate of Q2 (30V, ±20V max VGS), the low-RDS(ON) MOSFET. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| Q1 Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| Q1 Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | TJ=55°C | 2 |
| Q1 Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Q1 Gate Threshold Voltage | VGS(th) | 1.3 | 1.7 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Q1 Static Drain-Source On-Resistance | RDS(ON) |  | 3.5 | 5 | mΩ | VGS=10V, ID=20A | 2 |
| Q1 Static Drain-Source On-Resistance | RDS(ON) |  | 5 | 7 | mΩ | TJ=125°C | 2 |
| Q1 Static Drain-Source On-Resistance | RDS(ON) |  | 5.2 | 8 | mΩ | VGS=4.5V, ID=20A | 2 |
| Q1 Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Q1 Maximum Body-Diode Continuous Current | IS |  |  | 30 | A |  | 2 |
| Q1 Gate Resistance | Rg | 0.6 | 1.2 | 2 | Ω | f=1MHz | 2 |
| Q1 Total Gate Charge (10V) | Qg |  | 16 | 25 | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Q1 Total Gate Charge (4.5V) | Qg |  | 7.5 | 15 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 |
| Q2 Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 6 |
| Q2 Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 6 |
| Q2 Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | TJ=55°C | 6 |
| Q2 Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 6 |
| Q2 Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.1 | V | VDS=VGS, ID=250µA | 6 |
| Q2 Static Drain-Source On-Resistance | RDS(ON) |  | 1.5 | 2 | mΩ | VGS=10V, ID=20A | 6 |
| Q2 Static Drain-Source On-Resistance | RDS(ON) |  | 2.3 | 3 | mΩ | TJ=125°C | 6 |
| Q2 Static Drain-Source On-Resistance | RDS(ON) |  | 2.6 | 3 | mΩ | VGS=4.5V, ID=20A | 6 |
| Q2 Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 6 |
| Q2 Maximum Body-Diode Continuous Current | IS |  |  | 50 | A |  | 6 |
| Q2 Gate Resistance | Rg | 0.7 | 1.4 | 2.5 | Ω | f=1MHz | 6 |
| Q2 Total Gate Charge (10V) | Qg |  | 31.5 | 50 | nC | VGS=10V, VDS=15V, ID=20A | 6 |
| Q2 Total Gate Charge (4.5V) | Qg |  | 15 | 25 | nC | VGS=4.5V, VDS=15V, ID=20A | 6 |
| Q1 Maximum Junction-to-Ambient, t≤10s | RθJA |  | 25 | 35 | °C/W | t ≤ 10s | 1 |
| Q2 Maximum Junction-to-Ambient, t≤10s | RθJA |  | 25 | 35 | °C/W | t ≤ 10s | 1 |
| Q1 Maximum Junction-to-Ambient, Steady-State | RθJA |  | 50 | 65 | °C/W | Steady-State | 1 |
| Q2 Maximum Junction-to-Ambient, Steady-State | RθJA |  | 50 | 65 | °C/W | Steady-State | 1 |
| Q1 Maximum Junction-to-Case | RθJC |  | 4 | 5.2 | °C/W | Steady-State | 1 |
| Q2 Maximum Junction-to-Case | RθJC |  | 2.4 | 3.2 | °C/W | Steady-State | 1 |
| Q1 Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Q2 Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage (Q1 and Q2) | VGS | -20 |  | 20 | V |  | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `AOE6936`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aoe6936-etched.step` / `aoe6936-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aoe6936.step` / `aoe6936.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590253384747429888) (10 pp, sha256 `9189e2bd59612ce4`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aoe6936-datasheet.pdf)