component
AOD66923-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| aod66923-hxy-etched.glb | 13d ago |
| aod66923-hxy-etched.step | 13d ago |
| aod66923-hxy-hero.glb | 13d ago |
| aod66923-hxy-hero.overlay.json | 13d ago |
| aod66923-hxy.glb | 13d ago |
| aod66923-hxy.kicad_mod | 13d ago |
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| aod66923-hxy.lbr | 13d ago |
| aod66923-hxy.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
AOD66923-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AOD66923-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates VGS at ±20 V and gives VGS(th) of 1.3 V to 2.3 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain terminal; the datasheet rates VDS at 100 V and continuous drain current ID at 70 A. |
| 3 | S | passive | Source terminal, the reference for the gate-source and drain-source ratings in the absolute maximum table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | 100 | V | Tj=25℃ unless otherwise noted | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | Tj=25℃ unless otherwise noted | 1 | |
| Continuous drain current | ID | 70 | A | Tj=25℃ unless otherwise noted; footnote 1 not printed | 1 | ||
| Pulsed drain current | ID, pulse | 280 | A | Tj=25℃ unless otherwise noted; footnote 2 not printed | 1 | ||
| Power dissipation | PD | 100 | W | Tj=25℃ unless otherwise noted; footnote 3 not printed | 1 | ||
| Single pulsed avalanche energy | EAS | 110 | mJ | 1 | |||
| Operation and storage temperature | Tstg, Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RθJC | 1.25 | °C/W | 1 | |||
| Thermal resistance, junction-ambient | RθJA | 64 | °C/W | footnote 1 not printed | 1 | ||
| Drain to Source Breakdown Voltage | VDSS | 100 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 1.3 | 1.8 | 2.3 | V | VDS=VGS, ID=250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | 8.5 | 10.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-to-Source On-Resistance | RDS(ON) | 9.5 | 15 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Diode Forward Current | IS | 70 | A | TC=25 °C | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=10A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
AOD66923-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
aod66923-hxy-etched.step/aod66923-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod66923-hxy.step/aod66923-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (8 pp, sha256
976ad4f98928a28d, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).