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AOD66406-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOD66406-HXY

HXY MOSFET · MOSFETs · TO-252-2L

AOD66406-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated ±20 V VGS maximum, with logic-level drive down to 4.5 V (RDS(ON) < 8.5 mΩ at VGS=10 V).
2 D passive Drain of the N-channel MOSFET, rated 40 V VDS and 60 A continuous at TC=25°C (220 A pulsed).
3 S passive Source of the N-channel MOSFET, carrying up to 60 A continuous drain current at TC=25°C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 7 8.5 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 15 18 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 15 S VDS=10V,ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 68 A 2
Drain-Source Voltage VDS 40 V TC=25°C 1
Gate-Source Voltage VGS -20 20 V TC=25°C 1
Continuous Drain Current ID 60 A TC=25°C, VGS @ 10V 1
Continuous Drain Current ID 45 A TC=100°C, VGS @ 10V 1
Pulsed Drain Current IDM 220 A 1
Single Pulse Avalanche Energy EAS 416.1 mJ 1
Avalanche Current IAS 39 A 1
Total Power Dissipation PD 64.6 W TC=25°C 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Input Capacitance Clss 1800 PF VDS=20V,VGS=0V,F=1.0MHz 2
Output Capacitance Coss 280 PF VDS=20V,VGS=0V,F=1.0MHz 2
Reverse Transfer Capacitance Crss 190 PF VDS=20V,VGS=0V,F=1.0MHz 2
Turn-on Delay Time td(on) 6.4 nS VDD=20V,ID=2A,RL=1Ω,VGS=10V,RG=3Ω 2
Turn-on Rise Time tr 17.2 nS VDD=20V,ID=2A,RL=1Ω,VGS=10V,RG=3Ω 2
Turn-Off Delay Time td(off) 29.6 nS VDD=20V,ID=2A,RL=1Ω,VGS=10V,RG=3Ω 2
Turn-Off Fall Time tf 16.8 nS VDD=20V,ID=2A,RL=1Ω,VGS=10V,RG=3Ω 2
Total Gate Charge Qg 29 nC VDS=20V,ID=20A,VGS=10V 2
Gate-Source Charge Qgs 4.5 nC VDS=20V,ID=20A,VGS=10V 2
Gate-Drain Charge Qgd 6.4 nC VDS=20V,ID=20A,VGS=10V 2
Reverse Recovery Time trr 29 nS TJ = 25°C, IF = 20A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 26 nC TJ = 25°C, IF = 20A, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: AOD66406-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: aod66406-hxy-etched.step / aod66406-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod66406-hxy.step / aod66406-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 748a5349b9f7b263, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF