component
AOD609-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-4L. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD609-HXY
HXY MOSFET · MOSFETs · TO-252-4L
AOD609-HXY from HXY MOSFET, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS = 40V, ID = 20A, RDS(ON) < 24mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with absolute maximum VGS of ±20V and operation at gate voltages as low as 4.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (VDS = -40V, ID = -20A, RDS(ON) < 38mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with absolute maximum VGS of ±20V. |
| 5 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs (D1 and D2 tied together), brought out on the exposed tab. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-4L |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| N-ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| N-ch Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 18 | 24 | mΩ | VGS=10V, ID=10A | 2 | |
| N-ch Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 26 | 37 | mΩ | VGS=4.5V, ID=5A | 2 | |
| N-ch Forward Transconductance | gFS | 15 | S | VDS=5V,ID=10A | 2 | ||
| N-ch Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=10A | 2 | |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 3 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V,VGS=0V | 3 | ||
| P-ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS,ID=-250μA | 3 |
| P-ch Drain-Source On-State Resistance (VGS=-10V) | RDS(ON) | 33 | 38 | mΩ | VGS=-10V, ID=-7A | 3 | |
| P-ch Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | 37 | 49 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| P-ch Forward Transconductance | gFS | 15 | S | VDS=-5V,ID=-7A | 3 | ||
| P-ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-14A | 3 | ||
| N-ch Drain-Source Voltage | VDS | 40 | V | 1 | |||
| P-ch Drain-Source Voltage | VDS | -40 | V | 1 | |||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-ch Continuous Drain Current | ID@TA=25℃ | 20 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID@TA=25℃ | -20 | A | VGS @ 10V | 1 | ||
| N-ch Continuous Drain Current | ID@TA=70℃ | 16.5 | A | VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID@TA=70℃ | -16.5 | A | VGS @ 10V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 40 | A | 1 | |||
| P-ch Pulsed Drain Current | IDM | -40 | A | 1 | |||
| Total Power Dissipation (N-ch and P-ch) | PD@TA=25℃ | 40 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.1 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AOD609-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files:
aod609-hxy-etched.step/aod609-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod609-hxy.step/aod609-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (10 pp, sha256
6e49549acf5a72cc, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).