component
AOD607-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOD607-MS
MSKSEMI · MOSFETs · TO-252-4
AOD607-MS from MSKSEMI, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30V, 15mΩ, 16A). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated ±20V VGS with threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30V, 30mΩ, -12A). |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated ±20V VGS with threshold -1 to -2.5V. |
| 5 | D1/D2 | passive | Exposed tab, common drain of both the N-channel and P-channel MOSFETs. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch) | VDS | 30 | V | 2 | |||
| Drain-Source Voltage (P-ch) | VDS | -30 | V | 2 | |||
| Gate-Source Voltage (N-ch) | VGS | -20 | 20 | V | 2 | ||
| Gate-Source Voltage (P-ch) | VGS | -20 | 20 | V | 2 | ||
| Drain Current Continuous (N-ch) | ID | 16 | A | TC=25℃ | 2 | ||
| Drain Current Continuous (P-ch) | ID | -12 | A | TC=25℃ | 2 | ||
| Drain Current Continuous (N-ch) | ID | 10.1 | A | TC=100℃ | 2 | ||
| Drain Current Continuous (P-ch) | ID | -7.6 | A | TC=100℃ | 2 | ||
| Drain Current Pulsed (N-ch) | IDM | 64 | A | 2 | |||
| Drain Current Pulsed (P-ch) | IDM | -48 | A | 2 | |||
| Power Dissipation | PD | 32.5 | W | TC=25℃ | 2 | ||
| Power Dissipation Derate above 25℃ | 0.26 | W/℃ | 2 | ||||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62.5 | ℃/W | 2 | |||
| Thermal Resistance Junction to Case | RθJC | 3.84 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage (N-ch) | BVDSS | 30 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-Source Leakage Current (N-ch) | IDSS | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (N-ch) | IDSS | 10 | uA | VDS=24V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current (N-ch) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | 15 | 30 | mΩ | VGS=10V, ID=10A | 3 | |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | 30 | 40 | mΩ | VGS=4.5V, ID=5A | 3 | |
| Gate Threshold Voltage (N-ch) | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current (N-ch) | IS | 16 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current (N-ch) | ISM | 32 | A | 3 | |||
| Diode Forward Voltage (N-ch) | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 3 | ||
| Drain-Source Breakdown Voltage (P-ch) | BVDSS | -30 | V | VGS=0V, ID=-250uA | 5 | ||
| Drain-Source Leakage Current (P-ch) | IDSS | -1 | uA | VDS=-30V, VGS=0V, TJ=25℃ | 5 | ||
| Drain-Source Leakage Current (P-ch) | IDSS | -10 | uA | VDS=-24V, VGS=0V, TJ=125℃ | 5 | ||
| Gate-Source Leakage Current (P-ch) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 5 | |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | 30 | 40 | mΩ | VGS=-10V, ID=-7A | 5 | |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | 45 | 68 | mΩ | VGS=-4.5V, ID=-4A | 5 | |
| Gate Threshold Voltage (P-ch) | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 5 |
| Continuous Source Current (P-ch) | IS | -12 | A | VG=VD=0V, Force Current | 5 | ||
| Pulsed Source Current (P-ch) | ISM | -24 | A | 5 | |||
| Diode Forward Voltage (P-ch) | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 5 |
CAD (KiCad official)
- Symbol:
AOD607-MS - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
aod607-ms-etched.step/aod607-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod607-ms.step/aod607-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (8 pp, sha256
1103f963f69dfb3d, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD607-MS
**MSKSEMI** · MOSFETs · TO-252-4
AOD607-MS from MSKSEMI, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30V, 15mΩ, 16A). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated ±20V VGS with threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30V, 30mΩ, -12A). |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated ±20V VGS with threshold -1 to -2.5V. |
| 5 | D1/D2 | passive | Exposed tab, common drain of both the N-channel and P-channel MOSFETs. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch) | VDS | | | 30 | V | | 2 |
| Drain-Source Voltage (P-ch) | VDS | -30 | | | V | | 2 |
| Gate-Source Voltage (N-ch) | VGS | -20 | | 20 | V | | 2 |
| Gate-Source Voltage (P-ch) | VGS | -20 | | 20 | V | | 2 |
| Drain Current Continuous (N-ch) | ID | | | 16 | A | TC=25℃ | 2 |
| Drain Current Continuous (P-ch) | ID | -12 | | | A | TC=25℃ | 2 |
| Drain Current Continuous (N-ch) | ID | | | 10.1 | A | TC=100℃ | 2 |
| Drain Current Continuous (P-ch) | ID | -7.6 | | | A | TC=100℃ | 2 |
| Drain Current Pulsed (N-ch) | IDM | | | 64 | A | | 2 |
| Drain Current Pulsed (P-ch) | IDM | -48 | | | A | | 2 |
| Power Dissipation | PD | | | 32.5 | W | TC=25℃ | 2 |
| Power Dissipation Derate above 25℃ | | | | 0.26 | W/℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 62.5 | ℃/W | | 2 |
| Thermal Resistance Junction to Case | RθJC | | | 3.84 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage (N-ch) | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 3 |
| Drain-Source Leakage Current (N-ch) | IDSS | | | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (N-ch) | IDSS | | | 10 | uA | VDS=24V, VGS=0V, TJ=125℃ | 3 |
| Gate-Source Leakage Current (N-ch) | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | | 15 | 30 | mΩ | VGS=10V, ID=10A | 3 |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | | 30 | 40 | mΩ | VGS=4.5V, ID=5A | 3 |
| Gate Threshold Voltage (N-ch) | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current (N-ch) | IS | | | 16 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current (N-ch) | ISM | | | 32 | A | | 3 |
| Diode Forward Voltage (N-ch) | VSD | | | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
| Drain-Source Breakdown Voltage (P-ch) | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 5 |
| Drain-Source Leakage Current (P-ch) | IDSS | | | -1 | uA | VDS=-30V, VGS=0V, TJ=25℃ | 5 |
| Drain-Source Leakage Current (P-ch) | IDSS | | | -10 | uA | VDS=-24V, VGS=0V, TJ=125℃ | 5 |
| Gate-Source Leakage Current (P-ch) | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 5 |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | | 30 | 40 | mΩ | VGS=-10V, ID=-7A | 5 |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | | 45 | 68 | mΩ | VGS=-4.5V, ID=-4A | 5 |
| Gate Threshold Voltage (P-ch) | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 5 |
| Continuous Source Current (P-ch) | IS | | | -12 | A | VG=VD=0V, Force Current | 5 |
| Pulsed Source Current (P-ch) | ISM | | | -24 | A | | 5 |
| Diode Forward Voltage (P-ch) | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 5 |
## CAD (KiCad official)
- Symbol: `AOD607-MS`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files: `aod607-ms-etched.step` / `aod607-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod607-ms.step` / `aod607-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603039917622501376) (8 pp, sha256 `1103f963f69dfb3d`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod607-ms-datasheet.pdf)