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AOD508
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD508
Alpha Omega Semicon · MOSFETs · TO-252
AOD508 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain terminal; rated 30 V drain-source with ID of 70 A at VGS=10 V, and also electrically connected to the tab. |
| 3 | S | passive | Source terminal; reference for gate drive and body diode (maximum body-diode continuous current 58 A, package limited). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| VDS Spike | VSPIKE | 36 | V | 100ns | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Continuous Drain Current | ID | 70 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 55 | A | TC=100°C | 1 | ||
| Continuous Drain Current | IDSM | 22 | A | TA=25°C | 1 | ||
| Continuous Drain Current | IDSM | 18 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 159 | A | 1 | |||
| Avalanche Current | IAS | 37 | A | 1 | |||
| Avalanche energy | EAS | 68 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PDSM | 2.5 | W | TA=25°C | 1 | ||
| Power Dissipation | PDSM | 1.6 | W | TA=70°C | 1 | ||
| Power Dissipation | PD | 50 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 25 | W | TC=100°C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=±20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.4 | 3 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | 4.4 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.3 | 4.5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 58 | A | 2 | |||
| Gate resistance | Rg | 0.9 | 1.8 | 2.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Thermal Resistance Junction-to-Case, Steady-State | RθJC | 3 | °C/W | 1 | |||
| Maximum Junction-to-Ambient | RθJA | 16 | °C/W | t ≤ 10s | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 50 | °C/W | Steady-State | 1 | ||
| Forward Transconductance | gFS | 105 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 2010 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 898 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 124 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 36 | 49 | nC | VGS=10V, VDS=15V, ID=20A | 2 | |
| Total Gate Charge (4.5V) | Qg | 17 | 23 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | |
| Gate Source Charge | Qgs | 6 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Gate Drain Charge | Qgd | 8 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Turn-On DelayTime | tD(on) | 7.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 4 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 37 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 7.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 14 | ns | IF=20A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 20.3 | nC | IF=20A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
AOD508 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod508-etched.step/aod508-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod508.step/aod508.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
4a384784a615239f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).