component

AOD4N60-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaod4n60-vbfactory-2.0.0extractor-text

Verified AOD4N60-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AOD4N60-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-73knhiub/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ aod4n60-vb.kicad_sym✓ aod4n60-vb.kicad_mod✓ aod4n60-vb.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers aod4n60-vb: viewers · Ray 4d ago
aod4n60-vb-etched.glb Publish 0.1.0 · Ray 4d ago
aod4n60-vb-etched.step aod4n60-vb: factory component page (tier=lcsc) · Ray 4d ago
aod4n60-vb-hero.glb aod4n60-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
aod4n60-vb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
aod4n60-vb.glb Publish 0.1.0 · Ray 4d ago
aod4n60-vb.kicad_mod Publish 0.1.0 · Ray 4d ago
aod4n60-vb.kicad_sym Publish 0.1.0 · Ray 4d ago
aod4n60-vb.lbr Publish 0.1.0 · Ray 4d ago
aod4n60-vb.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 4d ago

AOD4N60-VB

VBsemi Elec · MOSFETs · TO-252

AOD4N60-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with VGS limited to ±30 V per the absolute maximum ratings.
2 D passive Drain terminal, rated for VDS of 650 V and a continuous drain current of 4.2 A at TC = 100 °C.
3 S passive Source terminal, the reference for VGS, with the integral p-n body diode connected between source and drain.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 4.2 A TC = 100 °C 1
Pulsed Drain Current IDM 18 A 1
Linear Derating Factor 0.48 W/°C 1
Single Pulse Avalanche Energy EAS 325 mJ 1
Repetitive Avalanche Current IAR 4 A 1
Repetitive Avalanche Energy EAR 6 mJ 1
Maximum Power Dissipation PD 60 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 2.8 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) Thermal Resistance RthJC 2.1 °C/W 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2.5 5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 3.9 S VDS = 50 V, ID = 3.1 A 2
Total Gate Charge Qg 48 nC ID = 3.2 A, VDS = 400 V, VGS = 10 V 2
Gate-Source Charge Qgs 12 nC ID = 3.2 A, VDS = 400 V, VGS = 10 V 2
Gate-Drain Charge Qgd 19 nC ID = 3.2 A, VDS = 400 V, VGS = 10 V 2
Continuous Source-Drain Diode Current IS 4 A 2
Pulsed Diode Forward Current ISM 21 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 3.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 493 739 ns TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 2.1 3.2 µC 2

CAD (KiCad official)

  • Symbol: AOD4N60-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod4n60-vb-etched.step / aod4n60-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod4n60-vb.step / aod4n60-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 25338defe7af8b14, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF