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AOD480

Public Made by Adom

by adom

XBLW MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOD480

XBLW · MOSFETs · TO-252-2L

AOD480 from XBLW, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage VGS is rated at ±20V in the absolute maximum ratings.
2 D passive Drain terminal; drain-source voltage VDS is rated at 30V with continuous drain current ID of 20A at TC=25℃.
3 S passive Source terminal; reference for VGS, with pulsed source current ISM rated at 50A.

Key specifications

Parameter Value
Manufacturer XBLW
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID@TC=25℃ 20 A VGS @ 10V 2
Continuous Drain Current ID@TC=100℃ 15 A VGS @ 10V 2
Continuous Drain Current ID@TA=25℃ 7.3 A VGS @ 10V 2
Continuous Drain Current ID@TA=70℃ 5.8 A VGS @ 10V 2
Pulsed Drain Current IDM 50 A 2
Single Pulse Avalanche Energy EAS 8.1 mJ 2
Avalanche Current IAS 12.7 A 2
Total Power Dissipation PD@TC=25℃ 20.8 W 2
Total Power Dissipation PD@TA=25℃ 2 W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-ambient RθJA 62 ℃/W 2
Thermal Resistance Junction-Case RθJC 6 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 3
Static Drain-Source On-Resistance RDS(ON) 18 25 mΩ VGS=10V , ID=10A 3
Static Drain-Source On-Resistance RDS(ON) 25 38 mΩ VGS=4.5V , ID=8A 3
Gate Threshold Voltage VGS(th) 1 1.2 2.5 V VGS=VDS , ID =250uA 3
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 3
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 3
Continuous Source Current IS 24 A VG=VD=0V , Force Current 3
Pulsed Source Current ISM 50 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 3
BVDSS Temperature Coefficient △BVDSS/△TJ 0.023 V/℃ Reference to 25℃ , ID=1mA 3
VGS(th) Temperature Coefficient △VGS(th) -4.2 mV/℃ 3
Forward Transconductance gfs 5.5 S VDS=5V , ID=10A 3
Gate Resistance Rg 2.3 Ω VDS=0V , VGS=0V , f=1MHz 3
Total Gate Charge (4.5V) Qg 4.9 nC VDS=15V , VGS=4.5V , ID=10A 3
Gate-Source Charge Qgs 1.66 nC 3
Gate-Drain Charge Qgd 1.85 nC 3
Turn-On Delay Time Td(on) 1.6 ns VDD=15V , VGS=10V , RG=3.3 , ID=10A 3
Rise Time Tr 15.8 ns 3
Turn-Off Delay Time Td(off) 13 ns 3
Fall Time Tf 4.8 ns 3
Input Capacitance Ciss 416 pF VDS=15V , VGS=0V , f=1MHz 3
Output Capacitance Coss 62 pF VDS=15V , VGS=0V , f=1MHz 3
Reverse Transfer Capacitance Crss 51 pF VDS=15V , VGS=0V , f=1MHz 3
Reverse Recovery Time trr 8.7 nS IF=10A , dI/dt=100A/µs , TJ=25℃ 3
Reverse Recovery Charge Qrr 1.95 nC 3

CAD (KiCad official)

  • Symbol: AOD480
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: aod480-etched.step / aod480-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod480.step / aod480.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XBLW datasheet (7 pp, sha256 f243326c5d3daeaa, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF