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AOD480-MS

Public Made by Adom

by adom

MSKSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOD480-MS

MSKSEMI · MOSFETs · TO-252

AOD480-MS from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet rates gate-source voltage VGS at ±20 V.
2 D passive Drain terminal; the datasheet rates drain-source voltage VDS at 30 V and continuous drain current ID at 20 A (TC=25℃).
3 S passive Source terminal; the datasheet rates continuous source current IS at 24 A (VG=VD=0V).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID@TC=25℃ 20 A VGS @ 10V 2
Continuous Drain Current ID@TC=100℃ 15 A VGS @ 10V 2
Continuous Drain Current ID@TA=25℃ 7.3 A VGS @ 10V 2
Continuous Drain Current ID@TA=70℃ 5.8 A VGS @ 10V 2
Pulsed Drain Current IDM 50 A 2
Single Pulse Avalanche Energy EAS 8.1 mJ L=0.1mH, IAS=12.7A, VGS=10V (note 3) 2
Avalanche Current IAS 12.7 A 2
Total Power Dissipation PD@TC=25℃ 20.8 W Limited by 150℃ junction temperature (note 4) 2
Total Power Dissipation PD@TA=25℃ 2 W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-ambient RθJA 62 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 2
Thermal Resistance Junction-Case RθJC 6 ℃/W Note 1 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 3
Static Drain-Source On-Resistance RDS(ON) 18 25 mΩ VGS=10V , ID=10A 3
Static Drain-Source On-Resistance RDS(ON) 25 38 mΩ VGS=4.5V , ID=8A 3
Gate Threshold Voltage VGS(th) 1 1.2 2.5 V VGS=VDS , ID=250uA 3
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 3
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 3
Continuous Source Current IS 24 A VG=VD=0V , Force Current 3
Pulsed Source Current ISM 50 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 3

CAD (KiCad official)

  • Symbol: AOD480-MS
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod480-ms-etched.step / aod480-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod480-ms.step / aod480-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 b167c48f5345917d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF