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AOD478-MS

MSKSEMI · MOSFETs · TO-252

AOD478-MS from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20V with threshold of 1.0 to 2.5V.
2 D passive Drain; drain-source voltage rated 100V with continuous drain current of 20A at TC=25℃.
3 S passive Source; continuous source (body diode) current rated 20A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID@TC=25℃ 20 A VGS @ 10V 2
Continuous Drain Current ID@TC=100℃ 10 A VGS @ 10V 2
Continuous Drain Current ID@TA=25℃ 5 A VGS @ 10V 2
Continuous Drain Current ID@TA=70℃ 3.4 A VGS @ 10V 2
Pulsed Drain Current IDM 30 A 2
Single Pulse Avalanche Energy EAS 6.1 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=11A 2
Avalanche Current IAS 15 A 2
Total Power Dissipation PD@TC=25℃ 34.7 W 2
Total Power Dissipation PD@TA=25℃ 2 W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-ambient RθJA 62 ℃/W 2
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 3
Static Drain-Source On-Resistance RDS(ON) 70 87 mΩ VGS=10V , ID=10A 3
Static Drain-Source On-Resistance RDS(ON) 85 90 mΩ VGS=4.5V , ID=8A 3
Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS , ID =250uA 3
Drain-Source Leakage Current IDSS 1 uA VDS=80V , VGS=0V , TJ=25℃ 3
Drain-Source Leakage Current IDSS 5 uA VDS=80V , VGS=0V , TJ=55℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 3
Continuous Source Current IS 20 A VG=VD=0V , Force Current 3
Pulsed Source Current ISM 30 A VG=VD=0V , Force Current 3
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 3
BVDSS Temperature Coefficient △BVDSS/△TJ 0.098 V/℃ Reference to 25℃ , ID=1mA 3
VGS(th) Temperature Coefficient △VGS(th) -4.57 mV/℃ 3
Forward Transconductance gfs 13 S VDS=5V , ID=10A 3
Gate Resistance Rg 2 Ω VDS=0V , VGS=0V , f=1MHz 3
Total Gate Charge (10V) Qg 26.2 nC VDS=80V , VGS=10V , ID=10A 3
Gate-Source Charge Qgs 4.6 nC VDS=80V , VGS=10V , ID=10A 3
Gate-Drain Charge Qgd 5.1 nC VDS=80V , VGS=10V , ID=10A 3
Turn-On Delay Time Td(on) 4.2 ns VDD=50V , VGS=10V , RG=3.3Ω ID=10A 3
Rise Time Tr 8.2 ns VDD=50V , VGS=10V , RG=3.3Ω ID=10A 3
Turn-Off Delay Time Td(off) 35.6 ns VDD=50V , VGS=10V , RG=3.3Ω ID=10A 3
Fall Time Tf 9.6 ns VDD=50V , VGS=10V , RG=3.3Ω ID=10A 3
Input Capacitance Ciss 1535 pF VDS=15V , VGS=0V , f=1MHz 3
Output Capacitance Coss 60 pF VDS=15V , VGS=0V , f=1MHz 3
Reverse Transfer Capacitance Crss 37 pF VDS=15V , VGS=0V , f=1MHz 3
Reverse Recovery Time trr 37 nS IF=10A , dI/dt=100A/µs , TJ=25℃ 3
Reverse Recovery Charge Qrr 27.3 nC IF=10A , dI/dt=100A/µs , TJ=25℃ 3

CAD (KiCad official)

  • Symbol: AOD478-MS
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod478-ms-etched.step / aod478-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod478-ms.step / aod478-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 775704b6e3e4764f, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF