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AOD472-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD472-VB
VBsemi Elec · MOSFETs · TO-252
AOD472-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate is the MOSFET control terminal, with a gate-source voltage rating of 15 V as printed in the absolute maximum ratings. |
| 2 | D | passive | Drain is connected to the tab and carries continuous drain current ID of 100 A at TC = 25°C (package limited) with drain-source voltage VDS of 20 V. |
| 3 | S | passive | Source is the MOSFET source terminal, rated for continuous source (diode conduction) current IS of 65 A and pulsed current ISM of 100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | 15 | V | 1 | |||
| Continuous Drain Current | ID | 100 | A | TC = 25C | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC = 100C | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 65 | A | 1 | |||
| Maximum Power Dissipation | PD | 71 | W | TC = 25C | 1 | ||
| Maximum Power Dissipation | PD | 8.3 | W | TA = 25C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 15 | 18 | C/W | t <= 10 sec, surface mounted on 1in x 1in FR4 board | 1 | |
| Maximum Junction-to-Ambient | RthJA | 40 | 50 | C/W | Steady state, surface mounted on 1in x 1in FR4 board | 1 | |
| Maximum Junction-to-Case | RthJC | 1.75 | 2.1 | C/W | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0 V, ID = 250 uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | V | VDS = VGS, ID = 250 uA | 2 | ||
| Gate-Body Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = 12 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | uA | VDS = 20 V, VGS = 0 V, TJ = 125C | 2 | ||
| On-State Drain Current | ID(on) | 100 | A | VDS = 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.0045 | Ohm | VGS = 4.5 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.0055 | Ohm | VGS = 4.5 V, ID = 20 A, TJ = 125C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.006 | Ohm | VGS = 2.5 V, ID = 20 A | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS = 5 V, ID = 40 A | 2 | ||
| Total Gate Charge | Qg | 26 | 35 | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 | |
| Gate-Source Charge | Qgs | 5 | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 | ||
| Gate-Drain Charge | Qgd | 7 | nC | VDS = 10 V, VGS = 4.5 V, ID = 40 A | 2 | ||
| Gate Resistance | Rg | 1 | 3.7 | Ohm | 2 | ||
| Turn-On Delay Time | td(on) | 20 | 35 | ns | VDD = 10 V, RL = 0.25 Ohm | 2 | |
| Rise Time | tr | 120 | 190 | ns | VDD = 10 V, RL = 0.25 Ohm | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 70 | ns | VDD = 10 V, RL = 0.25 Ohm, ID 40 A, VGEN = 4.5 V, RG = 2.5 Ohm | 2 | |
| Fall Time | tf | 20 | 35 | ns | VDD = 10 V, RL = 0.25 Ohm, ID 40 A, VGEN = 4.5 V, RG = 2.5 Ohm | 2 | |
| Pulsed Current | ISM | 100 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | 1.5 | V | IF = 100 A, VGS = 0 V | 2 | |
| Source-Drain Reverse Recovery Time | trr | 35 | 70 | ns | IF = 40 A, di/dt = 100 A/us | 2 | |
| Input Capacitance | Ciss | 3660 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 730 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 375 | pF | VGS = 0 V, VDS = 20 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
AOD472-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod472-vb-etched.step/aod472-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod472-vb.step/aod472-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (6 pp, sha256
66f3e81696190a23, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).