component
AOD464P
Public Made by Adomby adom
Cmos MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Publish 0.1.0
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AOD464P
Cmos · MOSFETs · TO-252
AOD464P from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the drawing labels the left lead G, with VGS rated at ±25 V. |
| 2 | D | passive | Drain, labeled D on the tab at the top of the drawing; VDS is rated at 105 V and continuous ID is 30 A at TC=25℃. |
| 3 | S | passive | Source; the drawing labels the right lead S, and the continuous source current IS is 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 105 | V | 1 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | 30 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 20 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 90 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 324 | mJ | 1 | |||
| Total Power Dissipation | PD | 80 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady-State) | RθJA | 55 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case (Steady-State) | RθJC | 1.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 105 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 38 | 45 | mΩ | VGS=10V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=84V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±25V, VDS=0V | 2 | |
| Continuous Source Current | IS | 30 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS=10V, ID=15A | 2 | ||
| Gate Resistance | Rg | 1.5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 40 | nC | VDS=50V, VGS=10V, ID=15A | 2 | ||
| Gate-Source Charge | Qgs | 8 | nC | VDS=50V, VGS=10V, ID=15A | 2 | ||
| Gate-Drain Charge | Qgd | 11 | nC | VDS=50V, VGS=10V, ID=15A | 2 | ||
| Turn-On Delay Time | Td(on) | 15 | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 | ||
| Rise Time | Tr | 26 | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 38 | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 | ||
| Fall Time | Tf | 30 | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 | ||
| Input Capacitance | Ciss | 1700 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 200 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
AOD464P - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod464p-etched.step/aod464p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod464p.step/aod464p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
ef8137b3bcb638ee, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD464P
**Cmos** · MOSFETs · TO-252
AOD464P from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the drawing labels the left lead G, with VGS rated at ±25 V. |
| 2 | D | passive | Drain, labeled D on the tab at the top of the drawing; VDS is rated at 105 V and continuous ID is 30 A at TC=25℃. |
| 3 | S | passive | Source; the drawing labels the right lead S, and the continuous source current IS is 30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 105 | V | | 1 |
| Gate-Source Voltage | VGS | -25 | | 25 | V | | 1 |
| Continuous Drain Current | ID | | | 30 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 20 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 90 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 324 | mJ | | 1 |
| Total Power Dissipation | PD | | | 80 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-ambient (Steady-State) | RθJA | | | 55 | ℃/W | | 1 |
| Thermal Resistance Junction-Case (Steady-State) | RθJC | | | 1.5 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 105 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 38 | 45 | mΩ | VGS=10V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=84V, VGS=0V, TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±25V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 30 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Forward Transconductance | gfs | | 20 | | S | VDS=10V, ID=15A | 2 |
| Gate Resistance | Rg | | 1.5 | | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 40 | | nC | VDS=50V, VGS=10V, ID=15A | 2 |
| Gate-Source Charge | Qgs | | 8 | | nC | VDS=50V, VGS=10V, ID=15A | 2 |
| Gate-Drain Charge | Qgd | | 11 | | nC | VDS=50V, VGS=10V, ID=15A | 2 |
| Turn-On Delay Time | Td(on) | | 15 | | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 |
| Rise Time | Tr | | 26 | | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 38 | | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 |
| Fall Time | Tf | | 30 | | ns | VDS=50V, VGS=10V, RL=2.7Ω, RG=3Ω | 2 |
| Input Capacitance | Ciss | | 1700 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 200 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 80 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `AOD464P`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod464p-etched.step` / `aod464p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod464p.step` / `aod464p.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Cmos datasheet](docs/aod464p-datasheet.pdf) (2 pp, sha256 `ef8137b3bcb638ee`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod464p-datasheet.pdf)