AOD456-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET; VGS absolute maximum is 15 V per the ratings table, with a threshold voltage of 0.5 V minimum at ID = 250 µA.
2	D	passive	Drain, also connected to the tab; VDS is 20 V maximum and continuous drain current is 100 A at TC = 25 °C (package limited).
3	S	passive	Source of the N-channel MOSFET; continuous source current (diode conduction) is 65 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			20	V		1
Gate-Source Voltage	VGS			15	V		1
Continuous Drain Current	ID			100	A	TC = 25C	1
Continuous Drain Current	ID			80	A	TC = 100C	1
Pulsed Drain Current	IDM			200	A		1
Continuous Source Current (Diode Conduction)	IS			65	A		1
Maximum Power Dissipation	PD			71	W	TC = 25C	1
Maximum Power Dissipation	PD			8.3	W	TA = 25C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	C		1
Maximum Junction-to-Ambient, t 10 sec	RthJA		15	18	C/W	t 10 sec	1
Maximum Junction-to-Ambient, Steady State	RthJA		40	50	C/W	Surface mounted on 1 x 1 FR4 board	1
Maximum Junction-to-Case	RthJC		1.75	2.1	C/W		1
Drain-Source Breakdown Voltage	V(BR)DSS	20			V	VGS = 0 V, ID = 250 A	2
Gate Threshold Voltage	VGS(th)	0.5			V	VDS = VGS, ID = 250 A	2
Gate-Body Leakage	IGSS			100	nA	VDS = 0 V, VGS = 12 V	2
Zero Gate Voltage Drain Current	IDSS			1	A	VDS = 20 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			50	A	VDS = 20 V, VGS = 0 V, TJ = 125C	2
On-State Drain Current	ID(on)	100			A	VDS = 5 V, VGS = 4.5 V	2
Drain-Source On-State Resistance	rDS(on)			0.0045	ohm	VGS = 4.5 V, ID = 20 A	2
Drain-Source On-State Resistance	rDS(on)			0.0055	ohm	VGS = 4.5 V, ID = 20 A, TJ = 125C	2
Drain-Source On-State Resistance	rDS(on)			0.006	ohm	VGS = 2.5 V, ID = 20 A	2
Forward Transconductance	gfs	20			S	VDS = 5 V, ID = 40 A	2
Total Gate Charge	Qg		26	35	nC	VDS = 10 V, VGS = 4.5 V, ID = 40 A	2
Gate Resistance	Rg		1	3.7	ohm		2
Turn-On Delay Time	td(on)		20	35	ns	VDD = 10 V, RL = 0.25 ohm	2
Rise Time	tr		120	190	ns	VDD = 10 V, RL = 0.25 ohm	2
Turn-Off Delay Time	td(off)		45	70	ns	VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm	2
Fall Time	tf		20	35	ns	VDD = 10 V, RL = 0.25 ohm, ID = 40 A, VGEN = 4.5 V, RG = 2.5 ohm	2
Pulsed Current	ISM			100	A		2
Diode Forward Voltage	VSD		1.2	1.5	V	IF = 100 A, VGS = 0 V	2
Source-Drain Reverse Recovery Time	trr		35	70	ns	IF = 40 A, di/dt = 100 A/s	2

CAD (KiCad official)

Symbol: AOD456-VB
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: aod456-vb-etched.step / aod456-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod456-vb.step / aod456-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (6 pp, sha256 74fa361295b50360, retrieved 2026-11-10, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AOD456-VB

Verified AOD456-VB

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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