component
AOD444
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD444
Alpha Omega Semicon · MOSFETs · TO-252
AOD444 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V, with RDS(ON) specified at VGS=10V (<60mΩ) and 4.5V (<85mΩ). |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage is rated 60 V with 12 A continuous drain current at TC=25°C. |
| 3 | S | passive | Source; the body diode is rated for 12 A maximum continuous current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=48V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | 5 | µA | VDS=48V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=±20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.4 | 3 | V | VDS=VGS ID=250µA | 2 |
| On State Drain Current | ID(ON) | 30 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance (TJ=25°C) | RDS(ON) | 47 | 60 | mΩ | VGS=10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 85 | 100 | mΩ | VGS=10V, ID=12A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance (VGS=4.5V) | RDS(ON) | 67 | 85 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Forward Transconductance | gFS | 14 | S | VDS=5V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.74 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 12 | A | 2 | |||
| Input Capacitance | Ciss | 360 | 450 | 540 | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Output Capacitance | Coss | 40 | 61 | 80 | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 16 | 27 | 40 | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Gate Resistance | Rg | 0.6 | 1.4 | 2 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg(10V) | 7.5 | 10 | nC | VGS=10V, VDS=30V, ID=12A | 2 | |
| Total Gate Charge (4.5V) | Qg(4.5V) | 3.8 | 5 | nC | 2 | ||
| Body Diode Reverse Recovery Time | trr | 27 | 35 | ns | IF=12A, dI/dt=100A/µs | 2 | |
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Maximum Junction-to-Case Thermal Resistance | RθJC | 7.5 | °C/W | Steady-State | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 60 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AOD444 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod444-etched.step/aod444-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod444.step/aod444.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
54ad1f4d3fcdf980, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).