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AOD442G-MS

MSKSEMI · MOSFETs · TO-252

AOD442G-MS from MSKSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±20 V.
2 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated 60 V and continuous drain current is 50 A at TC=25℃ (VGS @ 10V).
3 S passive Source terminal of the N-channel MOSFET; continuous source current is limited to 35 A and pulsed source current to 80 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 50 A @TC=25℃, VGS @ 10V 2
Continuous Drain Current ID 25 A @TC=100℃, VGS @ 10V 2
Continuous Drain Current ID 7.4 A @TA=25℃, VGS @ 10V 2
Continuous Drain Current ID 6 A @TA=70℃, VGS @ 10V 2
Pulsed Drain Current IDM 90 A 2
Single Pulse Avalanche Energy EAS 39.2 mJ Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=28A 2
Avalanche Current IAS 28 A 2
Total Power Dissipation PD 45 W @TC=25℃ 2
Total Power Dissipation PD 2 W @TA=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 2
Thermal Resistance Junction-Case RθJC 2.8 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
Static Drain-Source On-Resistance RDS(ON) 11 15 mΩ VGS=10V, ID=20A 3
Static Drain-Source On-Resistance RDS(ON) 15 20 mΩ VGS=4.5V, ID=10A 3
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 3
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current IS 35 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM 80 A 3
Diode Forward Voltage VSD 1 V VGS=0V , IS=A , TJ=25℃ 3

CAD (KiCad official)

  • Symbol: AOD442G-MS
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod442g-ms-etched.step / aod442g-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod442g-ms.step / aod442g-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 3b25ad16b63d0cf8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF