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AOD442G-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOD442G-HXY

HXY MOSFET · MOSFETs · TO-252-2L

AOD442G-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel enhancement MOSFET; the datasheet states operation with gate voltages as low as 4.5V and a gate-source voltage rating of ±20V.
2 D passive Drain terminal of the N-channel MOSFET; the datasheet gives a drain-source voltage rating of 60V and a continuous drain current of 50A.
3 S passive Source terminal of the N-channel MOSFET; the datasheet gives a drain-source voltage rating of 60V and a gate-source voltage rating of ±20V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 180 A 1
Single Pulse Avalanche Energy EAS 280 mJ 1
Avalanche Current IAS 28 A 1
Total Power Dissipation PD 87.7 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 13 17 mΩ VGS=10V, ID=30A 2
Forward Transconductance gFS 30 S VDS=5V,ID=30A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=30A 2
Diode Forward Current IS 58 A 2
Input Capacitance Clss 2498 PF 2
Output Capacitance Coss 185 PF 2
Reverse Transfer Capacitance Crss 80 PF VDS=25V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 12 nS 2
Turn-on Rise Time tr 5.2 nS 2
Turn-Off Delay Time td(off) 38 nS 2
Turn-Off Fall Time tf 27 nS VDD=30V,ID=2A,RL=1Ω VGS=10V,RGEN=3Ω 2
Total Gate Charge Qg 36 nC 2
Gate-Source Charge Qgs 9.9 nC 2
Gate-Drain Charge Qgd 6.6 nC VDS=30V,ID=30A, VGS=10V 2
Reverse Recovery Time trr 35 nS 2
Reverse Recovery Charge Qrr 47 nC TJ = 25°C, IF =30A di/dt = 100A/μs(Note3) 2

CAD (KiCad official)

  • Symbol: AOD442G-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: aod442g-hxy-etched.step / aod442g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod442g-hxy.step / aod442g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 4459a99a129f3ca6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF